US2016122189A1PendingUtilityA1

Graphene structure having nanobubbles and method of fabricating the same

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Oct 31, 2014Filed: Oct 30, 2015Published: May 5, 2016
Est. expiryOct 31, 2034(~8.3 yrs left)· nominal 20-yr term from priority
H10P 14/3451H10P 14/3406H10P 14/2926H10P 14/2923H10P 14/2922H10P 14/38H10P 14/24C23C 14/34C01B 2204/02B05D 1/60B05D 2203/00C01B 31/0484C01B 2204/22C01B 32/194C23C 16/26
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Claims

Abstract

Example embodiments relate to graphene structures having nanobubbles, and/or to a method of manufacturing the graphene structure. The graphene structure includes a substrate and a graphene layer on the substrate, the graphene layer having a plurality of convex portions. One or more of the plurality of convex portions has a hollow structure, and the graphene layer has a band gap that is due to the plurality of convex portions. A noble gas is included between the substrate and the convex portions.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A graphene structure comprising:
 a substrate; and   a graphene layer on the substrate, the graphene layer having a plurality of convex portions,   wherein one or more of the plurality of convex portions has a hollow structure, and the graphene layer has a band gap due to the plurality of convex portions.   
     
     
         2 . The graphene structure of  claim 1 , wherein the graphene layer is substantially a mono layer. 
     
     
         3 . The graphene structure of  claim 1 , wherein one or more of the plurality of convex portions has a diameter in a range from about 2 nm to about 6 nm, and a height in a range from about 0.15 nm to about 1 nm. 
     
     
         4 . The graphene structure of  claim 1 , wherein the substrate comprises a catalyst metal configured to grow the graphene layer. 
     
     
         5 . The graphene structure of  claim 1 , further comprising a noble gas intercalated between the substrate and the plurality of convex portions. 
     
     
         6 . The graphene structure of  claim 5 , wherein the noble gas comprises at least one of argon (Ar) ion gas, helium (He) ion gas, neon (Ne) ion gas, krypton (Kr) ion gas, xenon (Xe) ion gas, and radon (Rn) ion gas. 
     
     
         7 . The graphene structure of  claim 6 , wherein the noble gas is Ar. 
     
     
         8 . A method of manufacturing a graphene structure, the method comprising:
 preparing a graphene layer on a substrate; and   forming a plurality of convex portions on the graphene layer by irradiating a noble gas onto the graphene layer.   
     
     
         9 . The method of  claim 8 , wherein the preparing of the graphene layer comprises:
 preparing a catalyst substrate; and   growing the graphene layer on the substrate by supplying a carbon source gas on the catalyst substrate.   
     
     
         10 . The method of  claim 8 , wherein the preparing of the graphene layer comprises transferring the graphene layer on the substrate. 
     
     
         11 . The method of  claim 8 , wherein the irradiating the noble gas comprises sputtering the noble gas. 
     
     
         12 . The method of  claim 8 , wherein the noble gas comprises at least one of Ar ion gas, He ion gas, Ne ion gas, Kr ion gas, Xe ion gas, and Rn ion gas. 
     
     
         13 . The method of  claim 12 , wherein the noble gas is Ar gas. 
     
     
         14 . The method of  claim 11 , wherein the sputtering forms at least one noble gas between the substrate and each of the plurality of convex portions. 
     
     
         15 . The method of  claim 8 , wherein each of the plurality of convex portions has a diameter in a range from about 2 nm to about 6 nm, and a height in a range from about 0.15 nm to about 1 nm.

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