US2016121454A1PendingUtilityA1

Cmp pad conditioner and method for manufacturing the same

Assignee: SHINHAN DIAMOND IND CO LTDPriority: Sep 10, 2010Filed: Oct 6, 2015Published: May 5, 2016
Est. expirySep 10, 2030(~4.1 yrs left)· nominal 20-yr term from priority
B24B 53/017
56
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Claims

Abstract

Provided is a chemical mechanical polishing (CMP) pad conditioner including a substrate including a plurality of protrusions formed on at least one surface thereof and made of ceramic or hard metal alloy. The plurality of protrusions may be formed through laser processing so as not to have angled edges on an upper end and an inclined side thereof. The chemical mechanical polishing pad conditioner further includes a diamond thin film deposited so as to cover the plurality of protrusions, wherein the diamond thin film includes a rough polishing surface on which micro protrusions having a size of several μm are formed.

Claims

exact text as granted — not AI-modified
1 . A chemical mechanical polishing (CMP) pad conditioner comprising:
 a substrate including a plurality of protrusions formed on at least one surface thereof and made of ceramic or hard metal alloy, the plurality of protrusions being formed through laser processing so as not to have angled edges on an upper end and an inclined side thereof; and   a diamond thin film deposited so as to cover the plurality of protrusions,   wherein the diamond thin film includes a rough polishing surface on which micro protrusions having a size of several μm are formed,   wherein the diamond thin film is formed through chemical vapor deposition (CVD), and   wherein the substrate is made of ceramic containing Si 3 N 4 .   
     
     
         2 . The chemical mechanical polishing pad conditioner of  claim 1 , wherein each of the protrusions has a mountain shape in which an upper end thereof has an area smaller than that of a lower end thereof, and the upper end has an area of 100 μm 2  or less, and
 wherein each of the protrusions has an angle of 100 degrees or more between a tangent line of the upper end thereof and a tangent line of the side thereof. 
 
     
     
         3 . The chemical mechanical polishing pad conditioner of  claim 1 , wherein the plurality of protrusions have a height difference of 20 μm or less, and
 wherein two or more kinds of protrusions having different heights and sizes are regularly formed. 
 
     
     
         4 . The chemical mechanical polishing pad conditioner of  claim 1 , wherein a concave-convex pattern in which ridges and valleys are repeated is formed in a vicinity of each of the protrusions. 
     
     
         5 . The chemical mechanical polishing pad conditioner of  claim 1 , wherein the protrusions are grouped into a plurality of groups, and each of the plurality of groups is spaced apart from each other while including at least two protrusions.

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