Light emitting device with anti-total-internal-reflection capability
Abstract
A light emitting device includes: a light emitting layered structure; an electrode unit connected to the light emitting layered structure and including a transparent electrode layer of a primary metal oxide which is stacked on the light emitting layered structure along a stacking direction; and a total-internal-reflection suppression material dispersed in the transparent electrode layer and containing a secondary metal oxide that is different from the primary metal oxide. The secondary metal oxide has a concentration gradient within the transparent electrode layer along the stacking direction. The light output power of the light emitting device may be increased by about 44% as compared to a conventional light emitting device.
Claims
exact text as granted — not AI-modified1 . A method of making a light emitting device comprising:
preparing a light emitting layered structure; forming a particle layer, which contains metal nanoparticles of a first metal, on the light emitting layered structure; and simultaneously forming a transparent electrode layer of a primary metal oxide and at least partially oxidizing the first metal to form a secondary metal oxide, such that the secondary metal oxide is dispersed in the transparent electrode layer, wherein formation of the particle layer is conducted by forming a coating layer containing a solvent and the metal nanoparticles on a surface of the light emitting layered structure, followed by drying, wherein the concentration of the metal nanoparticles in the coating layer ranges from 5 ppm to 50 ppm.
2 . The method of claim 1 , wherein formation of the primary metal oxide and the secondary metal oxide is conducted under the presence of oxygen.
3 . The method of claim 1 , wherein the first metal is selected from the group consisting of silver, gold, aluminum, platinum, titanium, zirconium, palladium, and nickel.
4 . (canceled)
5 . The method of claim 4 , wherein the metal nanoparticles have an average diameter greater than 20 nm and less than 100 nm.
6 . (canceled)Join the waitlist — get patent alerts
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