Semiconductor device

Abstract

A partition in lattice form forms a plurality of housing sections. A plurality of circuit blocks including a semiconductor block and a terminal base block are electrically connected one to another in a state of being housed in the housing sections to form a power semiconductor circuit. The semiconductor block is formed by covering an IGBT with an insulating material. A collector of the IGBT is connected to an electrode through a metal plate. The electrode is led out from an inner portion of the insulating material to a side surface of the insulating material. A terminal base block includes a power terminal to which an external power wiring for supplying electric power to the IGBT is electrically connected, and a screw hole into which a screw for fixing the power wiring is inserted.

1 . A semiconductor device comprising:
 a plurality of busbar blocks including a busbar, a first solid insulating material covering encapsulating the busbar, and two pins each respectively connected electrically to one of two ends of the busbar and projecting downward from the first solid insulating material along a longitudinal axis of each respective pin; and   a plurality of semiconductor blocks electrically connected to each other by the busbar blocks to form a power semiconductor circuit,   wherein connection parts between the busbar and the two pins are covered encapsulated by the first solid insulating material, and respective distil ends opposite the connection parts along respective longitudinal axes do not make contact with the first solid insulating material,   each semiconductor block includes a semiconductor element, a second insulating material covering the semiconductor element, and an insertion electrode having an insertion hole in an upper surface of the second insulating material and electrically connected to the semiconductor element, and   the pins of the busbar blocks are inserted in and electrically connected to the insertion electrodes in the semiconductor blocks.