Fin device with blocking layer in channel region

Abstract

A semiconductor device includes a fin defined on a substrate and a gate electrode structure formed above the fin. A channel region of the device is defined beneath the gate electrode structure and source/drain regions of the fin are defined adjacent the gate electrode structure. A dielectric layer is defined at least in the channel region. The dielectric layer includes oxygen and at least one of nitrogen, carbon or fluorine.

What is claimed: 
     
         1 . A semiconductor device, comprising:
 a fin defined on a substrate;   a gate electrode structure formed above said fin, wherein a channel region of said device is defined beneath said gate electrode structure and source/drain regions of said fin are defined adjacent said gate electrode structure; and   a dielectric layer defined at least in said channel region, said dielectric layer comprising oxygen and at least one of nitrogen, carbon or fluorine.   
     
     
         2 . The device of  claim 1 , further comprising an epitaxial material in said source/drain regions, wherein said dielectric layer does not extend into said source/drain regions. 
     
     
         3 . The device of  claim 2 , wherein said epitaxial material comprises silicon/germanium. 
     
     
         4 . The device of  claim 1 , further comprising an isolation structure adjacent said fin. 
     
     
         5 . The device of  claim 1 , further comprising an epitaxial material in said source/drain regions, wherein said dielectric layer is disposed in said source/drain regions below said epitaxial material. 
     
     
         6 . The device of  claim 1 , wherein said dielectric layer is disposed in said source/drain regions. 
     
     
         7 . The device of  claim 1 , further comprising:
 an isolation structure adjacent said fin; and   an epitaxial material in said source/drain regions having a depth corresponding to a top surface of said isolation structure.   
     
     
         8 . A semiconductor device, comprising:
 a fin defined on a substrate;   a gate electrode structure formed above said fin, wherein a channel region of said device is defined beneath said gate electrode structure and source/drain regions of said fin are defined adjacent said gate electrode structure; and   a dielectric layer defined in said fin, said dielectric layer comprising oxygen and at least one of nitrogen, carbon or fluorine.   
     
     
         9 . The device of  claim 8 , further comprising an epitaxial material in said source/drain regions, wherein said dielectric layer does not extend into said source/drain regions. 
     
     
         10 . The device of  claim 9 , wherein said epitaxial material comprises silicon/germanium. 
     
     
         11 . The device of  claim 8 , further comprising an isolation structure adjacent said fin. 
     
     
         12 . The device of  claim 8 , further comprising an epitaxial material in said source/drain regions, wherein said dielectric layer is disposed in said source/drain regions below said epitaxial material. 
     
     
         13 . The device of  claim 8 , wherein said dielectric layer is disposed in said source/drain regions. 
     
     
         14 . The device of  claim 8 , further comprising:
 an isolation structure adjacent said fin; and   an epitaxial material in said source/drain regions having a depth corresponding to a top surface of said isolation structure.   
     
     
         15 . A semiconductor device, comprising:
 a fin defined on a substrate:   a gate electrode structure formed above said fin, wherein a channel region of said device is defined beneath said gate electrode structure;   source/drain regions defined in said fin adjacent said gate electrode structure, said source/drain regions comprising an epitaxial silicon/germanium material; and   a dielectric layer defined at least in said channel region, said dielectric layer comprising oxygen and at least one of nitrogen, carbon or fluorine.   
     
     
         16 . The device of  claim 15 , wherein said dielectric layer does not extend into said source/drain regions. 
     
     
         17 . The device of  claim 1 , further comprising an isolation structure adjacent said fin. 
     
     
         18 . The device of  claim 15 , wherein said dielectric layer is disposed in said source/drain regions below said epitaxial material. 
     
     
         19 . The device of  claim 15 , further comprising an isolation structure adjacent said fin, wherein said epitaxial material in said source/drain regions has a depth corresponding to a top surface of said isolation structure.