Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus

Abstract

An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
 (a) supplying a metal-containing source to the substrate;   (b) supplying an oxidizing source to the substrate; and   (c) supplying a catalyst to the substrate.   
     
     
         2 . The method according to  claim 1 , wherein the metal-containing source comprises at least one selected from a group consisting of chloride, fluoride, bromide and iodide. 
     
     
         3 . The method according to  claim 1 , wherein the metal comprises at least one selected from a group consisting of titanium, hafnium, and zirconium. 
     
     
         4 . The method according to  claim 1 , wherein the oxidizing source comprises at least one selected from a group consisting of H 2 O, H 2 O 2 , a mixed gas of H 2  and O 3  and a mixed gas of H 2  and O 2 . 
     
     
         5 . The method according to  claim 1 , wherein the catalyst comprises at least one selected from a group consisting of ammonia, pyridine, trimethylamine, methylamine, triethylamine, aminopyridine, picoline, piperazine and lutidine. 
     
     
         6 . A substrate processing apparatus including:
 a process chamber configured to accommodate a substrate;   a metal-containing source supply part configured to supply a metal-containing source into the process chamber;   an oxidizing source supply part configured to supply an oxidizing source into the process chamber;   a catalyst supply part configured to supply a catalyst into the process chamber; and   a control unit configured to control the metal-containing source supply part, the oxidizing source supply part, and catalyst supply part to form a metal-containing oxide film on the substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying the metal-containing source to the substrate; (b) supplying the oxidizing source to the substrate; and (c) supplying the catalyst to the substrate.