Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

Abstract

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

What is claimed is: 
     
         1 . A microelectronic device comprising:
 an insulating metal oxide layer;   wherein the insulating metal oxide layer is prepared by a process comprising:   exposing a substrate alternately to a vapor of a first reactant component and a vapor of a second reactant component;   wherein deposition of the first reactant component and the second reactant component are self-limiting;   wherein said first reactant component comprises a metal alkylamide;   wherein said second reactant component interacts with the deposited first reactant component to form the insulating metal oxide layer; and   wherein said insulating metal oxide layer comprises oxygen and the metal from the metal alkylamide.   
     
     
         2 . The microelectronic device of  claim 1 , wherein the insulating metal oxide layer insulates a gate or capacitor. 
     
     
         3 . The microelectronic device of  claim 2 , wherein the metal alkylamide is a hafnium dialkylamide. 
     
     
         4 . The microelectronic device of  claim 3 , wherein the hafnium dialkylamide is tetrakis(ethylmethylamido)hafnium. 
     
     
         5 . The microelectronic device of  claim 3 , wherein the hafnium dialkylamide is tetrakis(dimethylamido)hafnium. 
     
     
         6 . The microelectronic device of  claim 3 , wherein the hafnium dialkylamide is tetrakis(diethylamido)hafnium. 
     
     
         7 . The microelectronic device of  claim 2 , wherein the metal alkylamide is a zirconium dialkylamide. 
     
     
         8 . The microelectronic device of  claim 7 , wherein the zirconium dialkylamide is tetrakis(ethylmethylamido)zirconium. 
     
     
         9 . The microelectronic device of  claim 7 , wherein the zirconium dialkylamide is tetrakis(dimethylamido)zirconium. 
     
     
         10 . The microelectronic device of  claim 7 , wherein the zirconium dialkylamide is tetrakis(diethylamido)zirconium. 
     
     
         11 . The microelectronic device of  claim 1 , wherein the substrate has a hole and the insulating metal oxide layer conformally coats said hole. 
     
     
         12 . The microelectronic device of  claim 11 , wherein the hole has a length to diameter ratio of greater than 40. 
     
     
         13 . The microelectronic device of  claim 11 , wherein the hole comprises a trench. 
     
     
         14 . The microelectronic device of  claim 11 , wherein the substrate comprises silicon. 
     
     
         15 . The microelectronic device of  claim 11 , wherein the insulating metal oxide layer has a thickness that varies by less than 1%. 
     
     
         16 . A microelectronic device comprising:
 an insulating metal oxide layer;   wherein the insulating metal oxide layer is prepared by a process comprising:   introducing a vapor of a first reactant component into a deposition chamber;   introducing a vapor of a second reactant component into the deposition chamber;   alternately repeating the introduction of the first reactant component and the second reactant component;   wherein deposition of the first reactant component and the second reactant component are self-limiting;   wherein said first reactant component comprises a metal alkylamide;   wherein said second reactant component interacts with the deposited first reactant component to form the insulating metal oxide layer; and   wherein said insulating metal oxide layer comprises oxygen and the metal from the metal alkylamide.   
     
     
         17 . The microelectronic device of  claim 16 , wherein the insulating metal oxide layer insulates a gate or capacitor. 
     
     
         18 . The microelectronic device of  claim 17 , wherein the metal alkylamide is a hafnium dialkylamide. 
     
     
         19 . The microelectronic device of  claim 18 , wherein the hafnium dialkylamide is tetrakis(ethylmethylamido)hafnium. 
     
     
         20 . The microelectronic device of  claim 18 , wherein the hafnium dialkylamide is tetrakis(dimethylamido)hafnium. 
     
     
         21 . The microelectronic device of  claim 18 , wherein the hafnium dialkylamide is tetrakis(diethylamido)hafnium. 
     
     
         22 . The microelectronic device of  claim 17 , wherein the metal alkylamide is a zirconium dialkylamide. 
     
     
         23 . The microelectronic device of  claim 22 , wherein the zirconium dialkylamide is tetrakis(ethylmethylamido)zirconium. 
     
     
         24 . The microelectronic device of  claim 22 , wherein the zirconium dialkylamide is tetrakis(dimethylamido)zirconium. 
     
     
         25 . The microelectronic device of  claim 22 , wherein the zirconium dialkylamide is tetrakis(diethylamido)zirconium. 
     
     
         26 . The microelectronic device of  claim 16 , wherein the substrate has a hole and the insulating metal oxide layer conformally coats said hole. 
     
     
         27 . The microelectronic device of  claim 26 , wherein the hole has a length to diameter ratio of greater than 40. 
     
     
         28 . The microelectronic device of  claim 26 , wherein the hole comprises a trench. 
     
     
         29 . The microelectronic device of  claim 26 , wherein the substrate comprises silicon. 
     
     
         30 . The microelectronic device of  claim 26 , wherein the insulating metal oxide layer has a thickness that varies by less than 1%.