Semiconductor device

Abstract

A semiconductor device includes: a plurality of repair fuse circuits configured to each program a repair target address; and an enable signal generation circuit configured to generate at least one enable signal in response to a source signal and provide the enable signal to each of the repair fuse circuits in common. Since the semiconductor device may iteratively generate a rupture enable signal through a feedback scheme, the area occupied by a circuit, such as a shift register or a D flip-flop may be saved.

1 - 8 . (canceled) 
     
     
         9 . A semiconductor device, comprising:
 a rupture enable signal generation block configured to iteratively generate N rupture enable signals M times in response to a rupture source signal, wherein N and M are integers equal to or greater than 1;   M unit latch blocks configured to latch N bits of a repair target address, respectively, in response to a latch control signal;   M unit rupture signal generation blocks configured to respectively generate N rupture signals in response to the N rupture enable signals and the latched N bit addresses outputted from the M unit latch blocks, wherein the N rupture signals are sequentially generated on a unit block basis in response to a selection enable signal; and   M unit fuse blocks configured to be programmed in response to the N rupture signals that are outputted from the M unit rupture signal generation blocks.   
     
     
         10 . The semiconductor device of  claim 9 , wherein each of the M unit fuse blocks comprises N electrical fuses.