Semiconductor device with touch sensor circuit

Abstract

A semiconductor device includes a terminal to which a touch electrode may be coupled; a source voltage drop circuit generating a constant voltage; a phase shift circuit generating a phase shifted clock in response to a first clock and a phase control signal; and a switching circuit to which the constant voltage is supplied. The switching circuit generates drive pulses for applying the constant voltage to the terminal in response to the phase shifted clock. The phase shift circuit varies the phase of the drive pulses based on the phase control signal.

1 . A semiconductor device comprising:
 a terminal to which a touch electrode may be coupled;   a first capacitor which is coupled to the touch electrode and an insulating film;   a second capacitor which is coupled to the touch electrode and a ground voltage;   a source voltage drop circuit which generates a constant voltage;   a phase shift circuit which generates a phase shifted clock in response to a first clock and a phase control signal; and   a switching circuit to which the constant voltage is supplied;   wherein the switching circuit generates a drive pulse for applying the constant voltage to the terminal in response to the phase shifted clock, and   wherein the phase shift circuit varies the phase of the drive pulse based on the phase control signal.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising:
 a current control oscillation circuit; and   a counter;   wherein the source voltage drop circuit supplies a first current to the switching circuit;   wherein the current control oscillation circuit generates a second clock of which the frequency varies depending on the value of the first current;   wherein the counter counts the number of pulses in the second clock over a counting period, and   wherein the phase shift circuit varies the phase of the drive pulse in such a manner that the number of the drive pulses in effect when a noise superimposed on the touch electrode causes an increase in the value of the first current and the number of the drive pulses in effect when a noise superimposed on the touch electrode causes a decrease in the value of the first current approach each other.   
     
     
         3 . The semiconductor device according to  claim 2 , further comprising a random number generation circuit which randomly generates the phase control signal. 
     
     
         4 . The semiconductor device according to  claim 2 , further comprising a jitter addition circuit,
 wherein the jitter addition circuit adds jitter to the phase shifted clock based on a sampling clock asynchronous with the phase shifted clock.   
     
     
         5 . The semiconductor device according to  claim 4 , further comprising a spread spectrum clock generator which generates the sampling clock.