Process for producing a cu-cr material by powder metallurgy

Abstract

A process for producing a Cu—Cr material by powder metallurgy for a switching contact, in particular for vacuum switches, includes the steps of pressing a Cu—Cr powder mixture formed from Cu powder and Cr powder and sintering the pressed Cu—Cr powder mixture to form the material of the Cu—Cr switching contact. The sintering or a subsequent thermal treatment process is carried out with an alternating temperature profile, in which the Cu—Cr powder mixture or the Cu—Cr material is heated above an upper temperature limit value and cooled again below a lower temperature limit value at least twice in alternation. All of the steps are carried out at temperatures at which no molten phase forms.

1 . A process for producing a Cu—Cr material by powder metallurgy for a switching contact or a vacuum switch contact, the process comprising the following steps:
 pressing a Cu—Cr powder mixture formed from Cu powder and Cr powder; 
 sintering the pressed Cu—Cr powder mixture to form the material of the Cu—Cr switching contact; and 
 carrying out at least one of a sintering or subsequent thermal treatment process with an alternating temperature profile by heating the Cu—Cr powder mixture or the Cu—Cr material above an upper temperature limit value and cooling the Cu—Cr powder mixture or the Cu—Cr material again below a lower temperature limit value at least twice in alternation, and carrying out all of the steps at temperatures at which no molten phase forms. 
 
     
     
         2 . The process according to  claim 1 , which further comprises setting the upper temperature limit value in a range between 1065° C. and 1025° C. and setting the lower temperature limit value at least 50° C. below the upper temperature limit value or at least 100° C. below the upper temperature limit value. 
     
     
         3 . The process according to  claim 1 , which further comprises additionally performing a step of mixing Cu powder and Cr powder to form the Cu—Cr powder mixture. 
     
     
         4 . The process according to  claim 1 , which further comprises providing Cu particles in the Cu—Cr powder mixture having a particle size distribution with a maximum particle diameter of ≦80 μm or ≦50 μm. 
     
     
         5 . The process according to  claim 1 , which further comprises providing Cr particles in the Cu—Cr powder mixture having a particle size distribution with a maximum particle diameter of ≦200 μm or ≦160 μm. 
     
     
         6 . The process according to  claim 1 , which further comprises providing Cr particles in the Cu—Cr particle mixture having a particle size distribution with a minimum particle diameter of ≧20 μm or ≧32 μm. 
     
     
         7 . The process according to  claim 1 , which further comprises providing the Cu—Cr powder mixture with a Cu content of between 30% by weight and 80% by weight and a Cr content of between 70% by weight and 20% by weight.