Display device and method of manufacturing the same

Abstract

Provided are a display device and a method of manufacturing of the display device. The display device includes a substrate subjected to a primary preprocess; a conductor formed on the substrate and subjected to a secondary preprocess; and an insulating layer formed on the substrate and the conductor, in which the primary preprocess is performed for a surface energy of the first substrate higher than a first reference value and the secondary preprocess is performed for a surface energy of the conductor lower than a second reference value.

What is claimed is: 
     
         1 . A display device, comprising:
 a substrate;   a plurality of gate electrodes on the substrate;   a first insulating layer disposed between the gate electrodes; and   a second insulating layer directly contacting a top surface of the gate electrodes,   wherein a peak to valley thickness difference of the first insulating layer is a difference between a maximum thickness corresponding to the gate electrodes and a minimum thickness corresponding to the substrate.   
     
     
         2 . The display device of  claim 1 , wherein
 the substrate has a first surface energy; and   the gate electrodes have a second surface energy,   wherein the first surface energy is higher than the second surface energy.   
     
     
         3 . The display device of  claim 2 , wherein
 the first surface energy and the second surface energy represent based on each respective reference value, the reference value of the first surface energy comprises a value prior to a preprocess being applied on the substrate, and   the reference value of the second surface energy comprises a value prior to a preprocess being applied on the conductor.   
     
     
         4 . The display device of  claim 3 , wherein
 the first surface energy comprises about 55 J or more and the second surface energy comprises about 30 J or less.   
     
     
         5 . The display device of  claim 2 , wherein
 the first surface energy is performed by processing one of SF 6 , CF 4 , or O 2  on the substrate by a plasma enhanced chemical vapor deposition (PECVD) method.   
     
     
         6 . The display device of  claim 5 , wherein
 the second surface energy is performed by processing one of SF 6 , CF 4  or O 2  on the conductor by the PECVD method.   
     
     
         7 . The display device of  claim 1 , wherein
 the peak to valley thickness difference of the first insulating layer is about 0.6 um or less.   
     
     
         8 . The display device of  claim 1 , further comprising:
 an another substrate;   a light blocking member including openings on the another substrate; and   a color filter at the opening,   wherein the surface of the light blocking member except for the openings comprises a repellence with the color filter.   
     
     
         9 . The display device of  claim 1 , wherein
 the first insulating layer is disposed continuously between adjacent ones of the gate electrodes.   
     
     
         10 . The display device of  claim 1 , wherein
 the second insulating layer is disposed on the first insulating layer.   
     
     
         11 . The display device of  claim 10 , wherein
 the second insulating layer directly contacts the first insulating layer.   
     
     
         12 . The display device of  claim 1 , wherein
 the first insulating layer does not cover the top surface of the gate electrodes.   
     
     
         13 . The display device of  claim 1 , further comprising:
 a semiconductor disposed on the second insulating layer.