Semiconductor Device

Abstract

Disclosed herein is a device that includes a memory cell array including plurality of word lines, a plurality of bit lines each intersecting the word lines and a plurality of memory cells each disposed at an associated one of intersections of the word and bit lines, and the device further includes a driver configured to drive a selected one of the word lines from an inactive level to an active and to drive the selected one of the word lines from the active level to an intermediate level at a first rate and from the intermediated level to the inactive level at a second rate. The intermediate level is between the active and inactive levels, and the first rate is greater than the second rate.

What is claimed is: 
     
         1 . A device comprising:
 a memory cell array including a plurality of word lines, a plurality of bit lines each intersecting the word lines and a plurality of memory cells each disposed at an associated one of intersections of the word and bit lines; and   a driver configured to drive a selected one of the word lines from an inactive level to an active, the driver being further configured to drive the selected one of the word lines from the active level to an intermediate level at a first rate and from the intermediated level to the inactive level at a second rate, the intermediate level being between the active and inactive levels, and the first rate being greater than the second rate.   
     
     
         2 . The device according to  claim 1 , wherein the inactive level is negative with respect to a ground voltage and each of the active level and the intermediate level is positive with respect to the ground voltage. 
     
     
         3 . The device according to  claim 1 , wherein the second rate comprises a third rate and a fourth rate, the first rate being greater than each of the third and fourth rates, and the third rate being greater than the fourth rate. 
     
     
         4 . The device according to  claim 3 , wherein the selected one of the word lines is driven at the third rate from the intermediate level to an additional intermediate level and at the fourth rate from the additional intermediate level to the inactive level. 
     
     
         5 . The device according to  claim 4 , wherein the inactive level is negative with respect to a ground voltage and each of the active level, the intermediate level and the additional intermediate level is positive with respect to the ground voltage. 
     
     
         6 . The device according to  claim 1 , wherein the driver is configured to hold the selected one of the word lines at the intermediate level for a predetermined period of time and then drives the selected one of the word lines from the intermediate level to the inactive level. 
     
     
         7 . The device according to  claim 6 , wherein the inactive level is negative with respect to a ground voltage and each of the active level and the intermediate level is positive with respect to the ground voltage.