Epitaxially grown quantum well finfets for enhanced pfet performance

Abstract

A finFET with a quantum well having a conformal epitaxial well on a {100} crystallographic orientated fin. The structure may include a fin having a {100} crystallographic orientation; a conformal well covering the fin; and a conformal barrier covering the conformal well.

What is claimed is: 
     
         1 . A structure comprising:
 a fin having a {100} crystallographic orientation;   a conformal well covering the fin; and   a conformal barrier covering the conformal well.   
     
     
         2 . The structure of  claim 1 , wherein the fin has a thickness of 8 nm. 
     
     
         3 . The structure of  claim 1 , wherein the conformal well has a thickness of 1.5 nm and the conformal barrier has a thickness of 2 nm. 
     
     
         4 . The structure of  claim 1 , wherein the conformal well and the conformal barrier are above a recessed oxide fill, the recessed oxide fill electrically isolates a bottom portion of the fin from adjoining components, the bottom portion of the fin is below the conformal well and the conformal barrier, a top surface of the recessed oxide fill is below a top surface of the fin. 
     
     
         5 . The structure of  claim 1 , wherein the band-gap of the conformal well is less than the band-gap of the fin and less than the band-gap of the conformal barrier.