Method of manufacturing a semiconductor integrated circuit device

Abstract

The TSV technology has been popular as one of stacking technologies of a plurality of semiconductor chips. It has however been revealed by the present inventors that when TSV is formed using a so-called first via process, via middle process, front-via via last process, or the like, there is a possibility of defects such as gate breakdown occurring due to electrostatic breakdown in the subsequent process. In order to overcome the above problem, the present invention provides a method of manufacturing a semiconductor integrated circuit device, in which a through via electrode is formed by forming a hole in a semiconductor substrate, forming an insulating member in the hole, and burying a conductive member in the resulting hole while covering a portion of the hole except for the bottom portion with the insulating member.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor integrated circuit device comprising:
 forming a hole in a semiconductor wafer from a first surface side of the semiconductor wafer, the hole having a side surface and a bottom surface;   forming a barrier metal over the side surface and the bottom surface of the hole;   forming a first metal in the hole after forming the barrier metal;   removing the barrier metal formed over the bottom surface of the hole from a second surface side of the semiconductor wafer after forming the first metal, the second surface side being opposite to the first surface side of the semiconductor wafer;   forming a second metal covering the first metal at the bottom surface of the hole where the barrier metal was removed.   
     
     
         2 . The method of manufacturing a semiconductor integrated circuit device according to  claim 1 , further comprises:
 forming a protrusion by etching the semiconductor wafer from the second surface side of the semiconductor wafer, the protrusion comprising at least a portion of the barrier metal and the protrusion extending from the second surface side of the semiconductor wafer; and   forming an insulating film over the etched second side surface of the semiconductor wafer.   
     
     
         3 . The method of manufacturing a semiconductor integrated circuit device according to  claim 1 , wherein the second metal comprises one of titanium, nickel and copper. 
     
     
         4 . The method of manufacturing a semiconductor integrated circuit device according to  claim 1 , wherein the barrier metal comprises metal nitride. 
     
     
         5 . The method of manufacturing a semiconductor integrated circuit device according to  claim 1 , further comprising:
 forming at least one semiconductor device on the first side surface of the semiconductor wafer,   wherein the forming of the hole, the barrier metal, the first metal and the second metal are performed after the forming of the at least one semiconductor device.   
     
     
         6 . The method of manufacturing a semiconductor integrated circuit device according to  claim 1 , wherein the forming of the hole, the barrier metal, the first metal and the second metal are performed in a via middle process. 
     
     
         7 . The method of manufacturing a semiconductor integrated circuit device according to  claim 1 , wherein the first metal is copper. 
     
     
         8 . The method of manufacturing a semiconductor integrated circuit device according to  claim 1 , further comprising:
 forming an insulating film over the side surface and the bottom surface of the hole before the forming of the barrier metal.   
     
     
         9 . A method of manufacturing a semiconductor integrated circuit device comprising:
 preparing a semiconductor wafer having a first surface side and a second surface side which is opposite to the first surface side;   forming a hole in the semiconductor wafer from the first surface side, the hole having a side surface and a bottom surface;   forming a barrier metal in the hole;   forming a first metal in the hole after forming the barrier metal;   exposing the first metal by removing the barrier metal from the second surface side of the semiconductor wafer; and   forming a second metal over the first metal from the second surface side of the semiconductor wafer after exposing the first metal.   
     
     
         10 . The method of manufacturing a semiconductor integrated circuit device according to  claim 9 , further comprises:
 forming a protrusion by etching the semiconductor wafer from the second surface side of the semiconductor wafer, the protrusion comprising at least a portion of the barrier metal and the protrusion extending from the second surface side of the semiconductor wafer; and   forming an insulating film over the etched second side surface of the semiconductor wafer before exposing the first metal.   
     
     
         11 . The method of manufacturing a semiconductor integrated circuit device according to  claim 9 , wherein the second metal comprises one of titanium, nickel and copper. 
     
     
         12 . The method of manufacturing a semiconductor integrated circuit device according to  claim 9 , wherein the barrier metal comprises metal nitride. 
     
     
         13 . The method of manufacturing a semiconductor integrated circuit device according to  claim 9 , further comprising:
 forming at least one semiconductor device on the first side surface of the semiconductor wafer,   wherein the forming of the hole, the barrier metal, the first metal and the second metal are performed after the forming of the at least one semiconductor device.   
     
     
         14 . The method of manufacturing a semiconductor integrated circuit device according to  claim 9 , wherein the forming of the hole, the barrier metal, the first metal and the second metal are performed in a via middle process. 
     
     
         15 . The method of manufacturing a semiconductor integrated circuit device according to  claim 9 , wherein the first metal is copper. 
     
     
         16 . The method of manufacturing a semiconductor integrated circuit device according to  claim 9 , further comprising:
 forming an insulating film over the side surface and the bottom surface of the hole before the forming of the barrier metal.   
     
     
         17 . A method of manufacturing a semiconductor integrated circuit device comprising:
 preparing a semiconductor wafer having a first surface side and a second surface side which is opposite to the first surface side;   forming a semiconductor device over the first surface side;   forming a hole in the semiconductor wafer from the first surface side after forming the semiconductor device, the hole having a side surface and a bottom surface;   forming a first insulating film over the side surface and the bottom surface of the hole;   forming a barrier metal over the first insulating film in the hole;   forming a first metal in the hole after forming the barrier metal;   exposing a side surface of the first insulating film from the second surface side after forming the first metal;   forming a second insulating film over the semiconductor wafer from the second surface side after exposing the side surface of the insulating film;   removing the second insulating film to expose the first metal from the second surface side; and   forming a second metal over the first metal from the second surface side after exposing the first metal.