US2016093474A1PendingUtilityA1

Substrate processing method

Assignee: TOKYO ELECTRON LTDPriority: Aug 21, 2009Filed: Dec 2, 2015Published: Mar 31, 2016
Est. expiryAug 21, 2029(~3.1 yrs left)· nominal 20-yr term from priority
C23C 16/455H01J 37/3244H01J 37/32192C23C 16/511H05H 1/463H05H 1/46H01J 37/3222H01J 37/32229H05H 1/4622
60
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Claims

Abstract

A substrate processing method for performing a plasma process on a processing target substrate by a plasma processing apparatus is provided. The plasma processing apparatus comprises: a processing chamber; a gas supply unit; a mounting table; a microwave generator; a dielectric plate; a slot antenna plate; a wavelength shortening plate; and a microwave supply unit, and the microwave supply unit comprises a coaxial waveguide and a distance varying device. The substrate processing method comprises: mounting the processing target substrate on the mounting table; generating microwave by the microwave generator; and varying, by the distance varying device, a distance in a radial direction between a part of an outer surface of an inner conductor and a facing member facing a part of an outer surface of the inner conductor in order to uniformly generate plasma under a lower surface of the dielectric plate in the processing chamber.

Claims

exact text as granted — not AI-modified
We claim: 
     
         1 . A substrate processing method for performing a plasma process on a processing target substrate by a plasma processing apparatus,
 the plasma processing apparatus comprising:   a processing chamber, having a top opening, configured to perform therein a plasma process on a processing target substrate;   a gas supply unit configured to supply a plasma processing gas into the processing chamber;   a mounting table that is provided within the processing chamber and is configured to mount the processing target substrate thereon;   a microwave generator configured to generate a microwave for plasma excitation;   a dielectric plate placed for sealing the processing chamber hermetically by covering the top opening of the processing chamber and configured to transmit the microwave into the processing chamber;   a slot antenna plate, having a plurality of slot holes, provided on the dielectric plate and configured to radiate the microwave into the dielectric plate;   a wavelength shortening plate provided on the slot antenna plate and configured to propagate the microwave in a radial direction; and   a microwave supply unit configured to supply the microwave generated by the microwave generator to the slot antenna plate,   wherein the microwave supply unit comprises:   a coaxial waveguide including a substantially circular rod-shaped inner conductor whose one end is connected to a center of the slot antenna plate and a substantially cylindrical outer conductor provided outside the inner conductor with a gap therebetween in a radial direction; and   a distance varying device configured to vary a distance between a part of an outer surface of the inner conductor and a facing member facing the part of the outer surface of the inner conductor in a radial direction,   the plasma processing method comprising:   mounting the processing target substrate on the mounting table;   generating microwave by the microwave generator; and   varying, by the distance varying device, the distance in the radial direction between the part of the outer surface of the inner conductor and the facing member facing the part of the outer surface of the inner conductor in order to uniformly generate plasma under a lower surface of the dielectric plate in the processing chamber.

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