Semiconductor device and manufacturing method thereof, and mounting method of semiconductor device

Abstract

Disclosed is a semiconductor device whose reliability can be improved. The semiconductor device includes: first wiring formed over a semiconductor substrate via a first insulating film; a second insulating film that includes an inorganic film covering the first wiring and that has a flat surface on which CMP processing has been performed; a third insulating film that is formed over the second insulating film and includes an inorganic film having moisture resistance higher than that of the second insulating film; and second wiring formed over the third insulating film. The thickness of the second wiring is 10 times or more larger than that of the first wiring, and the second wiring is located over the third insulating film without an organic insulating film being interposed between itself and the third insulating film.

1 - 9 . (canceled) 
     
     
         10 . A method of manufacturing a semiconductor device, comprising:
 (a) forming a plurality of first wiring having a first thickness over a semiconductor substrate via a first insulating film;   (b) forming, over the first wiring, a second insulating film that includes an inorganic insulating film and has a first surface;   (c) forming a flattened second surface by performing CMP processing on the first surface of the second insulating film;   (d) forming, over the second surface, a third insulating film that includes an inorganic insulating film having a moisture resistance higher than that of the second insulating film; and   (e) forming, over the third insulating film, a plurality of second wiring having a second thickness that is 10 times or more larger than the first thickness.   
     
     
         11 . The method of manufacturing a semiconductor device according to  claim 10 ,
 wherein the forming the second insulating film in the step (b) comprises:   (b-1) forming, over the first wiring, a first sub insulating film by an HDP-CVD method; and   (b-2) forming, over the first sub insulating film, a second sub insulating film including a P-TEOS film.   
     
     
         12 . The method of manufacturing a semiconductor device according to  claim 10 ,
 wherein the step (e) comprises:   (e-1) forming, over the third insulating film, a Cu seed film by a sputtering method;   (e-2) forming, over the Cu seed film, a photoresist film having an opening in a region where the second wiring is formed; and   (e-3) forming, in the opening of the photoresist film, a Cu wiring film by a plating method.   
     
     
         13 . The method of manufacturing a semiconductor device according to  claim 12 , comprising:
 (e-4) after the step (e-3), forming, over the Cu wiring film, a Ni wiring film by a plating method.   
     
     
         14 . The method of manufacturing a semiconductor device according to  claim 10 ,
 wherein the third insulating film includes a silicon nitride film and has stress oriented in a direction opposite to that of stress applied to the semiconductor substrate, the latter stress being generated by shrinkage of the second wiring.   
     
     
         15 . The method of manufacturing a semiconductor device according to  claim 10 ,
 wherein dummy wiring is formed over the first insulating film so as to be adjacent to the first wiring, and overlaps with the second wiring in a planar view.   
     
     
         16 . The method of manufacturing a semiconductor device according to  claim 12 , further comprising:
 (e-5) before the step (e-1), forming, over the third insulating film, a titanium nitride film by a high directional sputtering method.   
     
     
         17 . A mounting method of a semiconductor device, comprising:
 (a) providing a semiconductor wafer which includes a semiconductor substrate having a major surface and a back surface, and having a third thickness, the major surface being formed with a plurality of semiconductor devices,   each semiconductor device including:
 a first insulating film formed over the semiconductor substrate; 
 a plurality of first wiring having a first thickness formed over the first insulating film; 
 a second insulating film that includes an inorganic insulating film covering the first wiring and that has a flat surface formed by CMP processing; 
 a third insulating film including an inorganic insulating film formed over the flat surface of the second insulating film; and 
 a plurality of second wiring having a second thickness formed over the third insulating film; 
   the third insulating film having a moisture resistance higher than that of the second insulating film,   the second thickness being 10 times or more larger than the first thickness, and   the second wiring being located over the third insulating film without an organic insulating film being interposed between itself and the third insulating film;   (b) forming a thin semiconductor wafer having a fourth thickness smaller than the third thickness by attaching a first tape on the major surface side of the semiconductor wafer and by grinding the back surface of the semiconductor wafer; and   (c) after the first tape is peeled from the thin semiconductor wafer, performing dicing on the major surface side of the thin semiconductor wafer by attaching a second tape to the back surface of the thin semiconductor wafer in order to separate each of the semiconductor devices.   
     
     
         18 . The mounting method of a semiconductor device according to  claim 17 ,
 wherein the third insulating film includes a silicon nitride film and has stress oriented in a direction opposite to that of stress applied to the semiconductor substrate, the latter stress being generated by shrinkage of the second wiring.   
     
     
         19 . The mounting method of a semiconductor device according to  claim 17 , comprising:
 after the step (c),   (d) mounting one of the semiconductor devices over a first lead; and   (e) coupling a corresponding one of the plurality of second wiring and a second lead together by a bonding wire.   
     
     
         20 . The mounting method of a semiconductor device according to  claim 19 , comprising:
 (f) after the step (e), sealing said one of the semiconductor devices, the first lead, the second lead, and the bonding wire by a resin.