Integrated circuits with metal-titanium oxide contacts and fabrication methods

Abstract

Devices and methods for forming semiconductor devices with metal-titanium oxide contacts are provided. One intermediate semiconductor device includes, for instance: a substrate, at least one field-effect transistor disposed on the substrate, a first contact region positioned over at least a first portion of the at least one field-effect transistor between a spacer and an interlayer dielectric, and a second contact region positioned over at least a second portion of the at least one field-effect transistor between a spacer and an interlayer dielectric. One method includes, for instance: obtaining an intermediate semiconductor device and forming at least one contact on the intermediate semiconductor device.

What is claimed is: 
     
         1 . An intermediate semiconductor device comprising:
 a substrate;   at least one field-effect transistor disposed on the substrate;   a first contact region positioned over at least a first portion of the at least one field-effect transistor, comprising:
 at least one first opening comprising a bottom portion and sidewalls; 
 a first layer on the bottom portion of the at least one first opening; 
 at least one barrier layer over the first layer and the sidewalls of the at least one first opening; and 
   a second contact region positioned over at least a second portion of the at least one field-effect transistor.   
     
     
         2 . The device of  claim 1 , wherein the first layer is a chemical oxide layer. 
     
     
         3 . The device of  claim 1 , wherein the first contact region is positioned between a spacer and an interlayer dielectric, the at least one first opening is positioned between the spacer and the interlayer dielectric, and the second contact region is positioned between the spacer and the interlayer dielectric. 
     
     
         4 . The device of  claim 1 , wherein the second contact region, comprises:
 at least one second opening comprising a bottom portion and sidewalls; and   the first layer on the bottom portion of the at least one second opening.   
     
     
         5 . The device of  claim 4 , wherein the second contact region, further comprises:
 the at least one barrier layer over the first layer and the sidewalls of the at least one second opening.   
     
     
         6 . The device of  claim 4 , wherein the first layer is a chemical oxide layer. 
     
     
         7 . The device of  claim 4 , wherein the first contact region further comprises:
 a first metal layer over the at least one barrier layer; and   a second metal layer over the first metal layer.   
     
     
         8 . The device of  claim 7 , wherein the second contact region further comprises:
 the first metal layer over the first layer and the sidewalls of the at least one second opening;   the second metal layer over the first metal layer; and   a metal contact layer positioned within the second metal layer in the at least one second opening.   
     
     
         9 . The device of  claim 8 , wherein the first contact region further comprises:
 a metal contact layer positioned within the second metal layer in the at least one first opening.   
     
     
         10 . The device of  claim 9 , wherein the first contact region is a p-metal contact region and the second contact region is an n-metal contact region. 
     
     
         11 . The device of  claim 4 , wherein the at least one second opening is positioned between the spacer and the interlayer dielectric. 
     
     
         12 . The device of  claim 4 , wherein the first layer of the first contact region is a TiO 2  and the first layer of the second contact region is a TiO 2 . 
     
     
         13 . The device of  claim 5 , wherein the first contact region further comprises:
 a first metal layer over the at least one barrier layer in the at least one first opening; and   a second metal layer positioned within the first metal layer.   
     
     
         14 . The device of  claim 13 , wherein the second contact region further comprises:
 a third metal layer over the at least one barrier layer in the at least one second opening; and   a fourth metal layer positioned within the third metal layer.   
     
     
         15 . The device of  claim 14 , wherein the first contact region further comprises:
 an adhesion layer positioned between the first metal layer and the second metal layer.   
     
     
         16 . The device of  claim 15 , wherein the second contact region further comprises:
 an adhesion layer positioned between the third metal layer and the fourth metal layer.   
     
     
         17 . The device of  claim 14 , wherein the first contact region is an n-metal contact region and the second contact region is a p-metal contact region. 
     
     
         18 . The device of  claim 14 , wherein the first contact region is a p-metal contact region and the second contact region is an n-metal contact region. 
     
     
         19 . The device of  claim 14 , wherein the first contact region is positioned within an interlayer dielectric layer and the at least one first opening is positioned within the interlayer dielectric layer. 
     
     
         20 . The device of  claim 19 , wherein the second contact region is positioned within the interlayer dielectric layer and the at least one second opening is positioned within the interlayer dielectric layer.