Semiconductor modules and methods of forming the same

Abstract

Electronic modules, and methods of forming and operating modules, are described. The modules include a capacitor, a first switching device, and a second switching device. The electronic modules further include a substrate such as a DBC substrate, which includes an insulating layer between a first metal layer and a second metal layer, and may include multiple layers of DBC substrates stacked over one another. The first metal layer includes a first portion and a second portion isolated from one another by a trench formed through the first metal layer between the two portions. The first and second switching devices are over the first metal layer, a first terminal of the capacitor is electrically connected to the first portion of the first metal layer, and a second terminal of the capacitor is electrically connected to the second portion of the first metal layer, with the capacitor extending over the trench.

What is claimed is: 
     
         1 . An electronic device, comprising:
 an enhancement-mode transistor comprising a first source electrode, a first gate electrode, a first drain electrode, and a first semiconductor layer, wherein the first source and first gate electrodes are on an opposite side of the first semiconductor layer from the first gate electrode; and   a depletion-mode transistor comprising a second source electrode and a second gate electrode, the second source electrode being over a second semiconductor layer; wherein   the enhancement-mode transistor is mounted directly on top of or over the second source electrode, with the first drain electrode in electrical contact with the second source electrode.   
     
     
         2 . The electronic device of  claim 1 , wherein the depletion-mode transistor further comprises a second drain electrode, and the second source and drain electrodes are both on a first side of the second semiconductor layer. 
     
     
         3 . The electronic device of  claim 2 , wherein the depletion-mode transistor is a lateral device. 
     
     
         4 . The electronic device of  claim 3 , wherein the enhancement-mode transistor is a silicon-based transistor. 
     
     
         5 . The electronic device of  claim 4 , wherein the depletion-mode transistor is a III-Nitride transistor. 
     
     
         6 . The electronic device of  claim 1 , wherein the first source electrode is electrically connected to the second gate electrode. 
     
     
         7 . The electronic device of  claim 1 , wherein the depletion-mode transistor comprises an insulator layer on the semiconductor layer, and the second source electrode is on the insulator layer. 
     
     
         8 . The electronic device of  claim 7 , the depletion-mode transistor comprising a device active area and a non-active area, wherein a device channel is in the semiconductor layer in the device active area but not in the semiconductor layer in the non-active area, and the insulator layer is over both the device active area and the non-active area. 
     
     
         9 . The electronic device of  claim 8 , wherein the enhancement-mode transistor is on the insulating layer and is directly over a portion of the device active area and a portion of the non-active area. 
     
     
         10 . The electronic device of  claim 1 , wherein the depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. 
     
     
         11 . A method of forming an electronic device, the method comprising:
 providing an enhancement-mode transistor comprising a first source electrode, a first gate electrode, a first drain electrode, and a first semiconductor layer, wherein the first source and first gate electrodes are on an opposite side of the first semiconductor layer from the first gate electrode;   providing a depletion-mode transistor comprising a second source electrode and a second gate electrode, the second source electrode being over a second semiconductor layer; and   mounting the enhancement-mode transistor directly on top of or over the second source electrode, with the first drain electrode in electrical contact with the second source electrode.   
     
     
         12 . The method of  claim 11 , wherein the depletion-mode transistor is a lateral device. 
     
     
         13 . The method of  claim 11 , further comprising wire bonding the second gate electrode to the first source electrode.