Semiconductor device

Abstract

A semiconductor device includes an AC coupling element, and a temperature monitoring unit that outputs a temperature monitor signal, the temperature monitoring unit has a first temperature monitoring element that outputs the temperature monitor signal, and the first temperature monitoring element is arranged in a region immediately below or a region adjacent to the AC coupling element.

1 - 20 . (canceled) 
     
     
         21 . A semiconductor device, comprising:
 an AC coupling element that is formed on a semiconductor substrate;   a temperature monitoring unit that outputs a temperature monitor signal in response to a change in a temperature of the semiconductor substrate;   a heat generation determination unit that outputs a heat generation detection signal on the basis of the temperature monitor signal;   a power supply pad that applies a supply voltage; and   a transmitter circuit that is coupled to the AC coupling element,   wherein the temperature monitoring unit includes a first temperature monitoring element that outputs the temperature monitor signal, and   wherein the first temperature monitoring element is arranged in a region below or a region adjacent to the AC coupling element.   
     
     
         22 . The semiconductor device according to  claim 21 ,
 wherein the temperature monitoring unit further includes a second temperature monitoring element,   wherein the second temperature monitoring element is arranged in a region below or in a region adjacent to the AC coupling element, and coupled in parallel to the first temperature monitoring element.   
     
     
         23 . A semiconductor device, comprising:
 an AC coupling element that is formed on a semiconductor substrate;   a temperature monitoring unit that outputs a temperature monitor signal in response to a change in a temperature of the semiconductor substrate;   a heat generation determination unit that outputs a heat generation detection signal on the basis of the temperature monitor signal;   a power supply pad that applies a supply voltage; and   a receiver circuit that is connected to the AC coupling element,   wherein the temperature monitoring unit includes a first temperature monitoring element that outputs the temperature monitor signal,   wherein the first temperature monitoring element is arranged in a region below or a region adjacent to the AC coupling element,   wherein the heat generation determination unit includes a comparator,   wherein the comparator outputs the heat generation detection signal on the basis of a comparison result between a reference voltage and the temperature monitor signal, and   wherein a resistance value of a power supply line between the power supply pad and the comparator is smaller than a resistance value between the power supply pad and the receiver circuit.   
     
     
         24 . The semiconductor device according to  claim 21 , further comprising:
 a temperature detection unit that activates an overheat protection function,   wherein the reference voltage is larger than a reference voltage which is applied to the temperature detection unit.   
     
     
         25 . The semiconductor device according to  claim 21 , further comprising:
 a reference temperature detection element,   wherein a distance between the reference temperature detection element and the AC coupling element is larger than a distance between the temperature monitoring unit and the AC coupling element, and   wherein the reference temperature detection element generates the reference voltage.   
     
     
         26 . The semiconductor device according to  claim 21 ,
 wherein the temperature monitoring unit is arranged adjacent to a transmission driver circuit of the transmitter circuit.   
     
     
         27 . The semiconductor device according to  claim 23 ,
 wherein the temperature monitoring unit is arranged adjacent to the receiver circuit.   
     
     
         28 . The semiconductor device according to  claim 21 ,
 wherein a distance between the AC coupling element and the heat generation determination unit is larger than a distance between the AC coupling element and the temperature monitoring unit.   
     
     
         29 . The semiconductor device according to  claim 28 ,
 wherein the AC coupling element is an on-chip transformer or a coupling capacitor.   
     
     
         30 . A semiconductor device, comprising:
 a temperature monitoring unit that includes a first temperature monitoring element formed on a semiconductor substrate; and   an AC coupling element that includes a first element and a second element formed on the semiconductor substrate,   wherein the first element and the second element are arranged to perform AC coupling, and   wherein the first temperature monitoring element is arranged in a region below or in a region adjacent to a formation region of the AC coupling element,   wherein the first element includes a first coil which is formed of a first wiring layer,   wherein the second element includes a second coil which is formed of a second wiring layer different from the first wiring layer, and   wherein the first temperature monitoring element formed in the region adjacent to the AC coupling element is covered with a shield layer formed of the lower wiring layer of the first wiring layer and the second wiring layer.   
     
     
         31 . The semiconductor device according to  claim 30 ,
 wherein the first element includes a third coil which is formed of a third wiring layer, and   wherein the second element includes a fourth coil which is formed of the third wiring layer.   
     
     
         32 . The semiconductor device according to  claim 30 ,
 wherein the first element includes a first capacitive electrode, and   wherein the second element includes a second capacitive electrode.   
     
     
         33 . The semiconductor device according to  claim 30 ,
 wherein the temperature monitoring unit further includes a second temperature monitoring element which is formed on the semiconductor substrate, and   wherein the second temperature monitoring element is arranged in a region below or in a region adjacent to the AC coupling element, and coupled in parallel to the first temperature monitoring element.