Semiconductor Device and Method of Fabricating the Same

Abstract

A semiconductor device includes the following elements. An element isolation portion separates first and second diffusion regions in a semiconductor substrate each other. A first insulating film is formed over the element isolation portion and the first and second diffusion regions. First and second contact plugs are formed over the first and second diffusion regions, respectively. The first and second contact plugs penetrate the first insulating film. A first conductive layer is formed over the first insulating film over the element isolation portion. A second insulating film is formed over the first conductive layer. A third contact plug penetrates the second insulating film, the third contact plug connecting the first contact plug. A second conductive layer is formed over the second insulating film contacting the third contact plug. The first and second conductive layers partly overlap the element isolation portion.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a semiconductor substrate;   first and second diffusion regions in the semiconductor substrate;   an element isolation portion separating the first and second diffusion regions from each other;   a first insulating film over the element isolation portion and the first and second diffusion regions;   first and second contact plugs over the first and second diffusion regions, respectively, the first and second contact plugs penetrating the first insulating film;   a first conductive layer over the first insulating film;   a second insulating film over the first conductive layer;   a third contact plug penetrating the second insulating film, the third contact plug being connected to the first contact plug; and   a second conductive layer over the second insulating film, the second conductive layer contacting the third contact plug,   wherein the first and second conductive layers partly overlap the element isolation portion.