Semiconductor device and method of manufacturing thereof

Abstract

A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate. An interconnect is spaced apart from the circuit area and extends from the top surface into the substrate. The interconnect includes a sidewall formed of an electrically insulating material. An opening is provided in the sidewall.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising:
 providing a substrate having a top surface;   forming a semiconductor circuit defining a circuit area on the top surface of the substrate;   forming an interconnect spaced apart from the circuit area and extending from the top surface into the substrate, the interconnect comprising a first sidewall formed of a first electrically insulating material; and   providing an opening within the first sidewall.   
     
     
         2 . The method of  claim 1 , wherein forming the interconnect comprises providing a second sidewall of a second electrically insulating material different from the first electrically insulating material, and wherein forming the opening comprises forming a recess within the first sidewall by selective etching. 
     
     
         3 . The method of  claim 2 , wherein forming the opening further comprises partial filling of the recess with a thermally decomposable material. 
     
     
         4 . The method of  claim 3 , wherein forming the opening further comprises filling the recess further with a porous and curable material. 
     
     
         5 . The method of  claim 4 , wherein forming the opening further comprises applying heat for decomposing the thermally decomposable material and for curing the porous material. 
     
     
         6 . The method of  claim 2 , wherein forming the opening further comprises depositing at least one of a dielectric layer and a metallization layer bridging the opening.