Shield member and apparatus for growing single crystal equipped with the same

Abstract

A shield member and an apparatus for growing a single crystal equipped with the shield member. Such a shield member includes: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part to support the substrate; and a heating apparatus positioned at an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed. The shield member is configured such that the heat capacity thereof increases from the center to the outer periphery.

1 . A shield member which is placed between a raw material storage part and a substrate supporting part in an apparatus for growing a single crystal and is placed apart from a raw material held in the raw material storage part,
 the apparatus comprising: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing a crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; and a heating apparatus positioned at an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, wherein   the shield member consists of a single member,   a plurality of permeation holes through which the raw material gas passes is formed, and   the shield member is configured such that the thickness of the shield member increases from the center to the outer periphery and the shield member has the heat capacity which increases from the center to the outer periphery due to the configuration.   
     
     
         2 . The shield member as set forth in  claim 1 , wherein the ratio of the maximum thickness (d.sub.max) and the minimum thickness (d.sub.min) of the shield member (d.sub.max/d.sub.min) ranges from 3 to 50. 
     
     
         3 . The shield member as set forth in  claim 1 , wherein the surface of the shield member on the side of the substrate supporting part is flat. 
     
     
         4 . The shield member as set forth in  claim 1 , wherein the shield member has an opening ratio of center side (total area of the opening of the permeation hole/total area of the portion other than the permeation hole) which is larger than an opening ratio of peripheral edge side. 
     
     
         5 . The shield member as set forth in  claim 1 , wherein the shield member is made of carbon material. 
     
     
         6 . An apparatus for growing a single crystal, comprising: a vessel for growing a single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; a shielding member which is placed between the raw material storage part and the substrate supporting part and is placed apart from a raw material which is held by the raw material storage part; and a heating apparatus positioned at outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, wherein the shield member is the shield member according to  claim 1 . 
     
     
         7 . The apparatus for growing a single crystal as set forth in  claim 6 , wherein the outer periphery of the shield member is supported by the inner wall of the vessel. 
     
     
         8 . The apparatus for growing a single crystal as set forth in  claim 6 , wherein the shield member is supported by a supporting member elongated from the bottom of the vessel. 
     
     
         9 . The apparatus for growing a single crystal as set forth in  claim 6 , wherein the single crystal is a single crystal of silicon carbide. 
     
     
         10 . The shield member as set forth in  claim 1 , wherein the thickness of the shield member varies continuously. 
     
     
         11 . The shield member as set forth in  claim 1 , wherein the shield member has a permeation hole which is a circular opening.