Electronic devices and method of fabricating the same

Abstract

An electronic device includes a substrate. A lower electrode is disposed on the substrate and has a flat portion and protrusions. An intermediate layer is on the lower electrode. An upper electrode is on the intermediate layer. The lower electrode includes an alloy of a first metal and a second metal. The protrusions have a content ratio of the second metal higher than that of the flat portion.

What is claimed is: 
     
         1 . An electronic device comprising:
 a substrate;   a lower electrode disposed on the substrate and having a flat portion and protrusions;   an intermediate layer on the lower electrode; and   an upper electrode on the intermediate layer,   wherein the lower electrode comprises an alloy of a first metal and a second metal, and   the protrusions have a content ratio of the second metal higher than that of the flat portion.   
     
     
         2 . The electronic device of  claim 1 , further comprising a conductive film disposed between the substrate and the lower electrode,
 wherein the conductive film comprises the first metal.   
     
     
         3 . The electronic device of  claim 1 , wherein the first metal comprises copper, and the second metal comprises silver. 
     
     
         4 . The electronic device of  claim 1 , wherein the intermediate layer comprises at least one of silicon (Si), silicon germanium (SiGe), silicon carbide (SiC), silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), silicon carbonitride (SiCN), silicon germanium oxide (SiGeO), silicon germanium oxynitride (SiGeON), silicon germanium carbide (SiGeC), a chalcopyrite-based compound semiconductor, and a Group II-IV compound semiconductor. 
     
     
         5 . The electronic device of  claim 1 , wherein the intermediate layer comprises a light absorbing layer generating electrical power from light. 
     
     
         6 . The electronic device of  claim 1 , wherein the intermediate layer comprises an organic light-emitting material. 
     
     
         7 . The electronic device of  claim 1 , wherein the intermediate layer comprises an inorganic light-emitting material. 
     
     
         8 . An electronic device comprising:
 a substrate;   a conductive film disposed on the substrate and including a first metal;   a lower electrode disposed on the substrate and including the first metal and a second metal;   an intermediate layer on the lower electrode; and   an upper electrode on the intermediate layer,   wherein the lower electrode comprises:   a flat portion on the conductive film; and   protrusions extending from the flat portion.   
     
     
         9 . The electronic device of  claim 8 , wherein the protrusions have a content ratio of the second metal higher than that of the flat portion. 
     
     
         10 . The electronic device of  claim 8 , wherein the protrusions have the same content ratio of the second metal as that of the flat portion.