Light emitting device light-amplified with graphene and method for manufacturing same

Abstract

The purpose of the present invention is to provide a method for manufacturing a light-amplified optoelectronic in device, on which pristine or doped graphene is transferred. Specifically, the method includes the steps of: depositing a first electrode, as a thin film, on the light emitting device; transferring pristine or doped graphene on the electrode thin film; etching the light emitting device in contact with the electrode thin film on which the transferred graphene has been transferred, thereby removing a part of the electrode thereon; spin-coating photoresist on the etched light emitting device; removing the photoresist from the spin-coated light emitting device, thereby forming an electrode thin film in a spin form and the pristine transferred to or graphene doped to the electrode thin film; and depositing metal on a second electrode.

What is claimed is: 
     
         1 . A light emitting device comprising: an electrode layer contacting an upper portion of a light emitting diode (LED) and a layer formed of pristine or doped graphene on the electrode layer. 
     
     
         2 . The light emitting device of  claim 1 , wherein the electrode layer is a zinc oxide thin film. 
     
     
         3 . The light emitting device of  claim 1 , wherein the doped graphene is n-type graphene. 
     
     
         4 . The light emitting device of  claim 3 , wherein the n-type graphene contains at least one element selected from a group consisting of nitrogen (N), fluorine (F), and manganese (Mn), or contains ammonia, benzyl viologen (BV) or mixtures thereof. 
     
     
         5 . The light emitting device of  claim 4 , wherein a concentration of a compound contained in the n-type graphene ranges from 1 to 50 mM. 
     
     
         6 . The light emitting device of  claim 1 , wherein the graphene is p-type graphene. 
     
     
         7 . The light emitting device of  claim 6 , wherein the p-type graphene contains at least one element from among oxygen (O), gold (Au), and bismuth (Bi), or contains at least one compound selected from a group consisting of CH 3 NO 2 , HNO 3 , HAuCl 4 , H 2 SO 4 , HCl, and AuCl 3 , or mixtures thereof. 
     
     
         8 . The light emitting device of  claim 7 , wherein a concentration of the compound contained in the graphene ranges from 1 to 50 mM. 
     
     
         9 . A method for fabricating a light emitting device of a graphene/zinc oxide electrode, the method comprising:
 depositing a first electrode as a thin film, on the light emitting device;   transferring graphene on the first electrode thin film and doping the graphene;   etching the light emitting device in contact with the first electrode thin film on which the graphene is transferred, thereby removing a portion of the first electrode;   spin-coating photoresist on the etched light emitting device;   removing the photoresist from the spin-coated light emitting device, thereby forming circularly-shaping electrode thin film as well as pristine or doped graphene on the electrode film; and   depositing a metal on a second electrode.   
     
     
         10 . The method of  claim 9 , further comprising: exposing a portion of the first electrode thin film by removing a portion of the graphene through a photolithography process, prior to the depositing of the metal on the second electrode. 
     
     
         11 . The method of  claim 9 , wherein the first electrode is a graphene/zinc oxide electrode thin film, and the metal on the second electrode is gold. 
     
     
         12 . The method of  claim 9 , wherein the graphene is n-type graphene. 
     
     
         13 . The method of  claim 12 , wherein the n-type graphene contains at least one element selected from a group consisting of nitrogen (N), fluorine (F), and manganese (Mn), or contains ammonia, benzyl viologen (BV) or mixtures thereof. 
     
     
         14 . The method of  claim 13 , wherein a concentration of a compound contained in the n-type graphene ranges from 1 to 50 mM. 
     
     
         15 . The method of  claim 9 , wherein the graphene is p-type graphene. 
     
     
         16 . The method of  claim 15 , wherein the p-type graphene contains at least one element from among oxygen (O), gold (Au), and bismuth (Bi), or contains at least one compound selected from a group consisting of CH 3 NO 2 , HNO 3 , HAuCl 4 , H 2 SO 4 , HCl, HF, and AuCl 3 , or mixtures thereof. 
     
     
         17 . The method of  claim 16 , wherein a concentration of the compound contained in the graphene ranges from 1 to 50 mM. 
     
     
         18 . The method of  claim 9 , wherein the doping of the graphene is performed through annealing under a nitrogen atmosphere. 
     
     
         19 . The method of  claim 18 , wherein the annealing is performed at a temperature of 700° C. to 1200 r for 3 minutes to 10 minutes.