Method of Manufacturing Semiconductor Device

Abstract

A method forms a film on a substrate to have different film thicknesses and features within a plane of the substrate and improves the manufacturing throughput. The method comprises: (a) supplying a first process gas from above a substrate and a second process gas from a lateral direction with respect to the substrate; and (b) supplying a first reactive gas from above the substrate and a second reactive gas from the lateral direction with respect to the substrate, wherein at least one of (a) and (b) is performed at least once in a manner that a total amount of the first and second process gases supplied to the substrate center is different from that of the first and second process gases supplied to the substrate periphery.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising:
 (a) supplying a first process gas from above a substrate and a second process gas from a lateral direction with respect to the substrate; and   (b) supplying a first reactive gas from above the substrate and a second reactive gas from the lateral direction with respect to the substrate,   wherein each of (a) and (b) is performed at least once in a manner that a total amount of the first process gas and the second process gas supplied to a center portion of the substrate is different from that of the first process gas and the second process gas supplied to a peripheral portion of the substrate; or a total amount of the first reactive gas and the second reactive gas supplied to the center portion of the substrate is different from that of the first reactive gas and the second reactive gas supplied to the peripheral portion of the substrate in at least one of (a) and (b).   
     
     
         2 . The method of  claim 1 , wherein the total amount of the first reactive gas and the second reactive gas supplied to the center portion of the substrate is greater than that of the first reactive gas and the second reactive gas supplied to the peripheral portion of the substrate in (b). 
     
     
         3 . The method of  claim 1 , wherein the total amount of the first reactive gas and the second reactive gas supplied to the center portion of the substrate is less than that of the first reactive gas and the second reactive gas supplied to the peripheral portion of the substrate in (b). 
     
     
         4 . The method of  claim 1 , wherein (b) comprises: activating the first reactive gas and the second reactive gas. 
     
     
         5 . The method of  claim 1 , wherein a supply of the first reactive gas starts after a supply of the second reactive gas starts in (b). 
     
     
         6 . The method of  claim 1 , wherein a supply of the first reactive gas starts after a supply of the second reactive gas is stopped in (b). 
     
     
         7 . The method of  claim 1 , wherein an amount of the first process gas supplied in (a) is greater than that of the second process gas supplied in (a). 
     
     
         8 . The method of  claim 1 , wherein an amount of the first process gas supplied in (a) is less than that of the second process gas supplied in (a). 
     
     
         9 . The method of  claim 1 , wherein a supply of the first process gas starts after a supply of the second process gas starts in (a). 
     
     
         10 . The method of  claim 1 , wherein a supply of the first process gas starts after a supply of the second process gas is stopped in (a). 
     
     
         11 . The method of  claim 1 , wherein each of (a) and (b) is performed at least once with a substrate support unit supporting the substrate elevated, and each of (a) and (b) is performed at least once with the substrate support unit supporting the substrate lowered. 
     
     
         12 . The method of  claim 1 , further comprising: (c) generating a plasma of at least one selected from the group consisting of the first process gas and the second process gas, and wherein each of (a) and (b) is performed at least once while a distance between a plasma adjusting electrode and the substrate is maintained at a first distance in (c), each of (a) and (b) is performed at least once while the distance between a plasma adjusting electrode and the substrate is maintained at a second distance in (c). 
     
     
         13 . The method of  claim 12 , wherein the second distance is shorter than the first distance.