Manufacturing method of semiconductor light-emitting element, and semiconductor light-emitting element

Abstract

There are provided a setting process configured to set in a chamber an aluminum nitride substrate in which a semiconductor layer is formed on a first principal plane, and an oxide film forming process configured to heat an inside of the chamber with a water molecule being introduced in the chamber and to form an oxide film including an amorphous oxide film and/or a crystalline oxide film on a second principal plane located on an opposite side to the first principal plane of the aluminum nitride substrate.

1 . A manufacturing method of a semiconductor light-emitting element, the manufacturing method comprising:
 setting in a chamber an aluminum nitride substrate in which a semiconductor layer is formed on a first principal plane; and   heating an inside of the chamber with a water molecule being introduced in the chamber to form an oxide film including an amorphous oxide film and/or a crystalline oxide film on a second principal plane located on an opposite side to the first principal plane of the aluminum nitride substrate.   
     
     
         2 . The manufacturing method of the semiconductor light-emitting element according to  claim 1 , wherein in forming the oxide film, the oxide film having a surface of an uneven structure is formed. 
     
     
         3 . The manufacturing method of the semiconductor light-emitting element according to  claim 1 , wherein in forming the oxide film, relative humidity in the chamber is equal to or higher than 50% and equal to or lower than 100%. 
     
     
         4 . The manufacturing method of the semiconductor light-emitting element according to  claim 1 , wherein in forming the oxide film, a temperature in the chamber is equal to or higher than 100° C. and equal to or lower than 140° C. 
     
     
         5 . The manufacturing method of the semiconductor light-emitting element according to  claim 1 , wherein in forming the oxide film, relative pressure in the chamber is equal to or higher than 0.01 MPa and equal to or lower than 0.3 MPa. 
     
     
         6 . A semiconductor light-emitting element, comprising:
 a semiconductor layer formed on a first principal plane of an aluminum nitride substrate; and   an oxide film formed on a second principal plane located on an opposite side to the first principal plane of the aluminum nitride substrate, the oxide film being smaller in refractive index than the aluminum nitride substrate,   wherein the oxide film includes an amorphous oxide film and/or a crystalline oxide film.   
     
     
         7 . The semiconductor light-emitting element according to  claim 6 , wherein an interface between the oxide film and the aluminum nitride substrate has an uneven structure. 
     
     
         8 . The semiconductor light-emitting element according to  claim 6 , wherein a surface of the oxide film has an uneven structure. 
     
     
         9 . The semiconductor light-emitting element according to  claim 6 ,
 wherein the oxide film is a layered structure made of a plurality of the oxide films including the amorphous oxide film and the crystalline oxide film, and   wherein the oxide film has an uneven structure at an interface between the amorphous oxide film and the crystalline oxide film.   
     
     
         10 . The semiconductor light-emitting element according to  claim 6 ,
 wherein the oxide film is a layered structure made of a plurality of the oxide films including the amorphous oxide film and the crystalline oxide film, and   wherein the oxide film includes the crystalline oxide film on the amorphous oxide film.   
     
     
         11 . The semiconductor light-emitting element according to  claim 6 , wherein the oxide film includes Al. 
     
     
         12 . The semiconductor light-emitting element according to  claim 6 , wherein a thickness of the oxide film is equal to or larger than 10 nm and equal to or smaller than 5 μm. 
     
     
         13 . The semiconductor light-emitting element according to  claim 6 , wherein the oxide film includes at least the amorphous oxide film, and a thickness of the amorphous oxide film is equal to or larger than 10 nm and equal to or smaller than 3 μm. 
     
     
         14 . The semiconductor light-emitting element according to  claim 6 , wherein the oxide film includes at least the crystalline oxide film, and a thickness of the crystalline oxide film is equal to or larger than 10 nm and equal to or smaller than 2 μm. 
     
     
         15 . The semiconductor light-emitting element according to  claim 6 , wherein the semiconductor layer is a group III-V compound semiconductor layer including an element selected from the group consisting of at least aluminum, gallium, nitrogen, and indium. 
     
     
         16 . The semiconductor light-emitting element according to  claim 6 , wherein the second principal plane of the aluminum nitride substrate is a C plane and an N plane in a hexagonal crystal. 
     
     
         17 . A semiconductor light-emitting element obtained by carrying out a method comprising:
 a setting process configured to set in a chamber an aluminum nitride substrate in which a semiconductor layer is formed on a first principal plane, and   an oxide film forming process configured to heat an inside of the chamber with a water molecule being introduced in the chamber and to form an oxide film including an amorphous oxide film and/or a crystalline oxide film on a second principal plane located on an opposite side to the first principal plane of the aluminum nitride substrate.