Semiconductor Device Manufacturing Method

Abstract

There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

What is claimed is: 
     
         1 . A semiconductor device manufacturing method, comprising:
 a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and   a heating process in which the target object having the film formed thereon is heated.   
     
     
         2 . The method of  claim 1 , wherein the film is a metal organic compound film. 
     
     
         3 . The method of  claim 1 , wherein the solution includes one or more compounds selected from a group consisting of a metal alkoxide compound, a metal chelate compound, a metal acylate compound, an amine-based metal organic compound and a metal isocyanate compound. 
     
     
         4 . The method of  claim 1 , wherein the film is an organic silicon compound film. 
     
     
         5 . The method of  claim 1 , wherein the solution includes a silylating agent. 
     
     
         6 . The method of  claim 1 , wherein the heating process is performed at a heating temperature equal to or higher than a glass transition point of the resist. 
     
     
         7 . A semiconductor device manufacturing method, comprising:
 a film forming process in which, by supplying a gas for modifying a surface layer of a resist to a target object having a resist pattern and allowing the gas to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and   a heating process in which the target object having the film formed thereon is heated.   
     
     
         8 . The method of  claim 7 , wherein the film is an organic silicon compound film. 
     
     
         9 . The method of  claim 7 , wherein the gas includes a silylating agent. 
     
     
         10 . The method of  claim 7 , wherein the heating process is performed at a heating temperature equal to or higher than a glass transition point of the resist.