Metal plating system including gas bubble removal unit

Abstract

An electroplating apparatus includes an anode configured to electrically communicate with an electrical voltage and an electrolyte solution. A cathode module includes a cathode that is configured to electrically communicate with a ground potential and the electrolyte solution. The cathode module further includes a wafer in electrical communication with the cathode. The wafer is configured to receive metal ions from the anode in response to current flowing through the anode via electrodeposition. The electroplating apparatus further includes at least one agitating device interposed between the wafer and the anode. The agitating device is configured to apply a force to gas bubbles adhering to a surface of the wafer facing the agitating device.

What is claimed is: 
     
         1 . An electroplating apparatus, comprising:
 an anode coupled to an electrical voltage and an electrolyte solution;   a cathode module including a cathode coupled to a ground potential and the electrolyte solution, the cathode module further including a wafer in electrical communication with the cathode, the wafer configured to receive metal ions from the anode via electrodeposition in response to current flowing through the anode; and   at least one agitating device interposed between the wafer and the anode, the agitating device configured to apply a force to gas bubbles adhering to at least one of a surface, trenches, and vias of the wafer facing the at least one agitating device.   
     
     
         2 . The electroplating apparatus of  claim 1 , wherein the agitating device is fixated within the electrolyte solution, and wherein the cathode module is configured to rotate about an axis extending perpendicular to the cathode. 
     
     
         3 . The electroplating apparatus of  claim 2 , wherein at least one agitating device includes a frame having an upper portion disposed a distance beneath a center region of the wafer, the upper portion having a slot formed therethrough to stream solution at a predetermined velocity toward the center region of the wafer. 
     
     
         4 . The electroplating apparatus of  claim 3 , wherein a velocity of streaming electrolyte increases from an edge of the wafer to the center region of the wafer such that a maximum velocity of the streaming electrolyte exists at the center region. 
     
     
         5 . The electroplating apparatus of  claim 4 , wherein the slot is diamond-shaped such that a velocity of the solution streamed at a center of the opening is greater than a velocity of the solution streamed at ends of the opening. 
     
     
         6 . The electroplating apparatus of  claim 5 , further comprising at least one ultrasonic transducer coupled to the wafer, the ultrasonic transducer configured to generate pulses at a predetermined frequency and intensity such that the wafer vibrates. 
     
     
         7 . The electroplating apparatus of  claim 6 , further comprising a current buffle unit interposed between the agitating device and the anode, the current buffle unit configured to provide a current distribution at the cathode. 
     
     
         8 . The electroplating apparatus of  claim 7 , further comprising:
 a power supply configured to generate the electrical current, the power supply configured to provide the voltage and the ground potential; and   a container configured to contain the electrolyte solution, the cathode module, and the anode immersed in the electrolyte solution.   
     
     
         9 . The electroplating apparatus of  claim 8 , further comprising a universal joint that couples the axis to the cathode module, the cathode module configured to rotate via axis and tilt with respect to the axis via the universal joint.