US2016046849A1PendingUtilityA1

Enriched silicon precursor compositions and apparatus and processes for utilizing same

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Assignee: ENTEGRIS INCPriority: Feb 26, 2010Filed: Oct 27, 2015Published: Feb 18, 2016
Est. expiryFeb 26, 2030(~3.6 yrs left)· nominal 20-yr term from priority
Inventors:James J. MayerRichard S. RayRobert KaimJoseph D. Sweeney
H10P 50/00H10P 30/208H10P 30/204H10P 30/225C09K 3/00H01J 2237/304H01J 2237/022H01J 37/3171H01J 37/08
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Claims

Abstract

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28 Si, 29 Si, and 30 Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A dopant gas composition for ion implantation of silicon, said composition comprising silicon dopant gas in mixture with supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein the silicon dopant gas comprises at least one gaseous silicon compound that is isotopically enriched above natural abundance in at least one of  28 Si,  29 Si, and  30 Si. 
     
     
         2 . The composition of  claim 1 , comprising at least one gaseous silicon compound that is isotopically enriched above natural abundance in  28 Si. 
     
     
         3 . The composition of  claim 2 , wherein the gaseous silicon compound that is isotopically enriched above natural abundance in  28 Si is isotopically enriched at a level of enrichment of above 50 atomic %. 
     
     
         4 . The composition of  claim 3 , wherein the level of enrichment is up to 100 atomic %. 
     
     
         5 . The composition of  claim 1 , comprising at least one gaseous silicon compound that is isotopically enriched above natural abundance in  29 Si. 
     
     
         6 . The composition of  claim 5 , wherein the gaseous silicon compound that is isotopically enriched above natural abundance in  29 Si is isotopically enriched at a level of enrichment of above 92.3 atomic %. 
     
     
         7 . The composition of  claim 6 , wherein the level of enrichment is up to 100 atomic %. 
     
     
         8 . The composition of  claim 1 , comprising at least one gaseous silicon compound that is isotopically enriched above natural abundance in  30 Si. 
     
     
         9 . The composition of  claim 1 , comprising a supplemental gas comprising a diluent gas. 
     
     
         10 . The composition of  claim 1 , comprising a supplemental gas comprising a co-species gas. 
     
     
         11 . The composition of  claim 1 , comprising a supplemental gas including at least one gas species selected from the group consisting of argon, hydrogen, fluorine, krypton, neon, helium, ammonia, amines, water, phosphine, arsine, germane, hydrogen selenide, hydrogen sulfide, nitrogen, oxygen, carbon monoxide, xenon difluoride, diborane, methane, xenon, silicon tetrafluoride (SiF 4 ), silane (SiH 4 ), disilane (Si 2 H 6 ), C 1 -C 8  alkylsilanes, fluorosilanes, and chlorosilanes. 
     
     
         12 . The composition of  claim 1 , comprising a supplemental gas including at least one gas species selected from the group consisting of xenon, hydrogen, silane, argon, disilane, ammonia, krypton, and nitrogen. 
     
     
         13 . The composition of  claim 1 , wherein the at least one gaseous silicon compound comprises a silicon compound selected from the group consisting of silicon tetrafluoride (SiF 4 ), silane (SiH 4 ), disilane (Si 2 H 6 ), C 1 -C 8  alkylsilanes, fluorosilanes, and chlorosilanes. 
     
     
         14 . The composition of  claim 13 , wherein the at least one gaseous silicon compound comprises silane (SiH 4 ). 
     
     
         15 . The composition of  claim 13 , wherein the at least one gaseous silicon compound comprises silicon tetrafluoride (SiF 4 ). 
     
     
         16 . The composition of  claim 15 , wherein the silicon tetrafluoride (SiF 4 ) is isotopically enriched above natural abundance in  28 Si is isotopically enriched at a level of enrichment of above 50 atomic % up to 100 atomic %. 
     
     
         17 . The composition of  claim 15 , wherein the silicon tetrafluoride (SiF 4 ) is isotopically enriched above natural abundance in  29 Si is isotopically enriched at a level of enrichment of above 92.3 atomic % up to 100 atomic %. 
     
     
         18 . The composition of  claim 15 , wherein the silicon tetrafluoride (SiF 4 ) is isotopically enriched above natural abundance in  30 Si. 
     
     
         19 . The composition of  claim 15 , comprising a supplemental gas including at least one gas species selected from the group consisting of argon, hydrogen, fluorine, krypton, neon, helium, ammonia, amines, water, phosphine, arsine, germane, hydrogen selenide, hydrogen sulfide, nitrogen, oxygen, carbon monoxide, xenon difluoride, diborane, methane, xenon, silane (SiH 4 ), disilane (Si 2 H 6 ), C 1 -C 8  alkylsilanes, fluorosilanes, and chlorosilanes. 
     
     
         20 . The composition of  claim 15 , wherein silicon tetrafluoride (SiF 4 ) is present at concentration in a range of from 5% to 98% by volume, based on total volume of the composition. 
     
     
         21 . The composition of  claim 15 , wherein silicon tetrafluoride (SiF 4 ) is present at concentration in a range of from 80% to 98% by volume, based on total volume of the composition. 
     
     
         22 . The composition of  claim 1 , wherein said at least one gaseous silicon compound is isotopically enriched above natural abundance in  28 Si, with a concentration of  28 Si that is greater than at least one of 93 atomic %, 94 atomic %, 95 atomic %, 96 atomic %, 97 atomic %, 98 atomic %, 99 atomic %, and 99.9 atomic %, and up to 100 atomic %. 
     
     
         23 . The composition of  claim 1 , wherein said at least one gaseous silicon compound is isotopically enriched above natural abundance in  29 Si, with a concentration of  29 Si that is greater than at least one of 5 atomic %, 7 atomic %, 10 atomic %, 12 atomic %, 15 atomic %, 20 atomic %, 25 atomic %, 30 atomic %, 35 atomic %, 40 atomic %, 50 atomic %, 51 atomic %, 52 atomic %, 53 atomic %, 54 atomic %, 55 atomic %, 56 atomic %, 57 atomic %, 58 atomic %, 59 atomic %, 60 atomic %, 70 atomic %, 80 atomic %, 90 atomic %, 95 atomic %, 96 atomic %, 97 atomic %, 98 atomic %, 99 atomic %, and 99.9 atomic %, and up to 100 atomic %. 
     
     
         24 . The composition of  claim 1 , wherein said at least one gaseous silicon compound is isotopically enriched above natural abundance in  30 Si, with a concentration of  30 Si that is greater than at least one of 3.5 atomic %, 4 atomic %, 5 atomic %, 7 atomic %, 10 atomic %, 12 atomic %, 15 atomic %, 20 atomic %, 25 atomic %, 30 atomic %, 35 atomic %, 40 atomic %, 50 atomic %, 60 atomic %, 70 atomic %, 80 atomic %, 90 atomic %, 95 atomic %, 96 atomic %, 97 atomic %, 98 atomic %, 99 atomic %, or 99.9 atomic %, and up to 100 atomic %. 
     
     
         25 . The composition of  claim 1 , wherein the at least one gaseous silicon compound comprises a silicon compound selected from the group consisting of SiF 4 , SiH 4 , Si 2 H 6 , SiH 3 CH 3 , SiH 2 (CH 3 ) 2 , SiH(CH 3 ) 3 , Si(CH 3 ) 4 , SiH 3 (C 2 H 5 ), SiH 2 (C 2 H 5 ) 2 , SiH(C 2 H 5 ) 3 , Si(C 2 H 5 ) 4 , SiHF 3 , SiH 2 F 2 , SiH 3 F, SiCl 4 , SiHCl 3 , SiH 2 Cl 2 , and SiH 3 Cl. 
     
     
         26 . A dopant gas composition for ion implantation of silicon, comprising a composition selected from the group consisting of:
 (i) isotopically enriched silicon tetrafluoride with hydrogen;   (ii) isotopically enriched silicon tetrafluoride with silane;   (iii) isotopically enriched silicon tetrafluoride and isotopically enriched silane;   (iv) isotopically enriched silicon tetrafluoride with argon;   (v) isotopically enriched silicon tetrafluoride with disilane;   (vi) isotopically enriched silicon tetrafluoride and isotopically enriched disilane;   (vii) isotopically enriched silicon tetrafluoride with hydrogen;   (viii) isotopically enriched silicon tetrafluoride with ammonia;   (ix) isotopically enriched silicon tetrafluoride with ammonia and xenon;   (x) isotopically enriched silicon tetrafluoride with hydrogen and krypton;   (xi) isotopically enriched silicon tetrafluoride with ammonia and krypton;   (xii) isotopically enriched silicon tetrafluoride with nitrogen;   (xiii) isotopically enriched silicon tetrafluoride with nitrogen and xenon;   (xiv) isotopically enriched silicon tetrafluoride with nitrogen and krypton;   (xv) isotopically enriched silicon tetrafluoride with xenon;   (xvi) isotopically enriched silicon tetrafluoride with krypton; and   (xvii) isotopically enriched silicon tetrafluoride with xenon and hydrogen.

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