Metal precursor powder, method of manufactuirng conductive metal layer or pattern, and device including the same

Abstract

A metal precursor powder, a method of manufacturing a conductive metal layer or pattern, and an electronic device including the same, are provided, and in the metal precursor powder, the Gibbs free energy change of hydrogen removal at a temperature range of −25° C. to 25° C. is −100 kJ/mol to 300 kJ/mol.

What is claimed is: 
     
         1 . A composition comprising second metal precursor ink for producing a metal precursor powder comprising:
 a metal precursor raw material,   a reducing agent,   a second solvent, and   an organic or inorganic ligand raw material.   
     
     
         2 . The composition of  claim 1 , wherein the metal precursor raw material is a metal chloride, a metal hydride, a metal hydroxide, a metal sulfide, a metal nitrate, a metal nitride, a metal halide, a metal alkyl compound, a metal aryl compound, a complex compound thereof, or a combination thereof. 
     
     
         3 . The composition of  claim 1 , wherein the metal precursor raw material comprises titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), halfnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), aluminum (Al), galium (Ga), germanium (Ge), indium (In), tin (Zn), antimony (Sb), thallium (TI), lead (Pb), bismuth (Bi), lithium (Li), beryllium (Be), sodium (Na), magnesium (Mg), potassium (K), calcium (Ca), rubidium (Rb), strontium (Sr), cesium (Cs), barium (Ba) or silicon (Si). 
     
     
         4 . The composition of  claim 1 , wherein the reducing agent is sodium hydride (NaOH 2 ), hydrazine (N 2 H 4 ), lithium borohydride (LiBH 4 ), sodium borohydride (NaBH 4 ), potassium borohydride (KBH 4 ), lithium aluminum hydride (LiAlH 4 ), sodium aluminum hydride (NaAlH 4 ), potassium aluminum hydride (KAlH 4 ), or a combination thereof. 
     
     
         5 . The composition of  claim 1 , wherein the second solvent is an ether-based solvent, a benzene-based solvent, an alkyl sulfide-based solvent, an amide-based solvent, an amine-based solvent, a nitrile-based solvent, an alkane-based solvent, a thiol-based solvent, a halogenated hydrocarbon-based solvent, an alcohol-based solvent, an aldehyde-based solvent, a ketone-based solvent, a mercaptan-based solvent, a carboxylic acid-based solvent, a mineral acid-based solvent, a toluene-based solvent, a polyol-based solvent or a combination thereof. 
     
     
         6 . The composition of  claim 1 , wherein the organic or inorganic ligand raw material is an amine, a phosphine, an ether, a sulfide, a thiol or a combination thereof. 
     
     
         7 . The composition of  claim 1 , wherein the organic or inorganic ligand raw material is represented by Chemical Formula 1.
   R 1   y A  [Chemical Formula 1]
   (wherein, A represents N, P, As, Sb, O, S, Se, or Te and R 1  each independently represents H, a C1-C20 alkyl group, a C2-C20 alkenyl group, a C2-C20 alkynyl group, a C3-C120 cycloalkyl group, a C4-C120 cycloalkenyl group, a C6-C100 aryl group, or a C7-C100 aralkyl group and y represents 2 or 3.)   
     
     
         8 . The composition of  claim 7 , wherein A represents N, and y represents 3. 
     
     
         9 . The composition of  claim 8 , wherein the organic or inorganic ligand raw material is trimethylamine, triethylamine, tri-n-propylamine, triisoporpylamine, methyldiethylamine, dimethylethylamine, n-propyldimethylamine, isopropyldiethylamine or a combination thereof. 
     
     
         10 . The composition of  claim 9 , wherein the organic or inorganic ligand raw material is trimethylamine, triethylamine, methyldiethylamine, dimethylethylamine or a combination thereof. 
     
     
         11 . A metal precursor powder that is produced by using the composition of  claim 1 . 
     
     
         12 . The metal precursor powder of  claim 11 , wherein the metal precursor powder is represented by Chemical Formula 2.
   AlH 3 .N(R 1 R 2 R 3 )  [Chemical Formula 2]
   (wherein, R 1  to R 3  each independently represent a C1-C20 alkyl group).