US2016045953A1PendingUtilityA1

Flexible metallic glass substrate with high resilience, manufacturing method thereof, and electronic device using same

Assignee: SK INNOVATION CO LTDPriority: Aug 18, 2014Filed: Aug 17, 2015Published: Feb 18, 2016
Est. expiryAug 18, 2034(~8.1 yrs left)· nominal 20-yr term from priority
C22C 1/11C22C 45/10B22D 11/0611B22D 11/001B22D 25/02C22C 45/001C22C 45/005C22C 45/00C22C 45/006C22C 45/008
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Claims

Abstract

Disclosed herein is a flexible substrate, made of metallic glass that is of high resilience suitable for use in electronic devices. The metallic glass is composed of a commercial alloy that can be produced in a continuous process on a mass scale, and may be selected from among Mg-, Ca-, Al-, Ti-, Zr-, Hf-, Fe-, Co-, Ni-, and Cu-based metallic glass. Preferably, its crystallization temperature, which determines the process allowable temperature, is 200° C. or higher. The flexible metallic glass substrate exhibits excellent fatigue properties as well as resilience of 1.5 MJ/m 3 or higher. Its coefficient of thermal expansion is within a small range of 1 to 20 ppm/° C., so that the flexible metallic glass substrate shows a better interfacial property with electronic devices.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A flexible substrate for use in an electronic device, wherein the flexible substrate is made of metallic glass having high resilience. 
     
     
         2 . The flexible substrate of  claim 1 , wherein the metallic glass is a material selected from among Mg-, Ca-, Al-, Ti-, Zr-, Hf-, Fe-, Co-, Ni-, and Cu-based metallic glass. 
     
     
         3 . The flexible substrate of  claim 1 , ranging in strength from 0.3 to 5 GPa and in elastic modulus from 30 to 250 GPa, and having a yield strain of 1.5 or higher. 
     
     
         4 . The flexible substrate of  claim 1 , having a resilience of 1.5 MJ/m J  or higher. 
     
     
         5 . The flexible substrate of  claim 1 , wherein the metallic glass has a crystallization temperature of 200° C. or higher. 
     
     
         6 . The flexible substrate of  claim 1 , ranging in thickness from 1 to 500 μm. 
     
     
         7 . The flexible substrate of  claim 1 , ranging in coefficient of thermal expansion (CTE) from 1 to 20 ppm/° C. 
     
     
         8 . The flexible substrate of  claim 1 , having a bending fatigue limit of 0.5% or higher. 
     
     
         9 . A method for manufacturing a flexible substrate having high resilience, comprising:
 preparing materials according to a composition of a metallic glass with high resilience; and   forming the materials into a metallic glass ribbon.   
     
     
         10 . The method of  claim 9 , wherein the forming step is carried out by controlling a melt spinneret nozzle to form a metallic glass ribbon having a wide width. 
     
     
         11 . The method of  claim 9 , further comprising winding the metallic glass ribbon. 
     
     
         12 . The method of  claim 9 , further comprising inosculating the metallic glass ribbon with another to achieve area enlargement. 
     
     
         13 . The method of  claim 12 , wherein the area enlargement is achieved by inosculating the metallic glass ribbon with a homogeneous ribbon or with a heterogeneous material through a thermo-plastic forming process. 
     
     
         14 . A method for manufacturing a flexible substrate for use in an electronic device, comprising:
 preparing materials according to a composition of a metallic glass with high resilience;   forming the materials into bulk metallic glass; and   processing the bulk metallic glass into a thin plate.   
     
     
         15 . The method of  claim 14 , wherein the forming step is carried out in a thermo-plastic forming process. 
     
     
         16 . The method of  claim 9 , further comprising planarizing a surface of the substrate. 
     
     
         17 . The method of  claim 9 , wherein the substrate ranges in thickness from 1 to 500 μm. 
     
     
         18 . The method of  claim 14 , further comprising planarizing a surface of the substrate. 
     
     
         19 . The method of  claim 14 , wherein the substrate ranges in thickness from 1 to 500 μm. 
     
     
         20 . An electronic device, fabricated with the flexible substrate of  claim 1 .

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