Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a semiconductor substrate having a main surface, a MONOS-type memory cell formed over the main surface and having a channel, an n-channel transistor formed over the main surface, and a p-channel transistor formed over the man surface. Nitride films are formed in a manner to contact the top surfaces of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor. The nitride films apply stress to the channels of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor.

1 . (canceled) 
     
     
         2 . A semiconductor device including an n-channel transistor and a p-channel transistor comprising:
 a first gate electrode of the n-channel transistor and a second gate electrode of the p-channel transistor formed over a semiconductor substrate;   a first side wall of silicon oxide film formed over a side wall of the first gate electrode;   a second side wall of silicon oxide film formed over a side wall of the second gate electrode;   a third side wall of silicon nitride film formed over the side wall of the first gate electrode through the first side wall;   a first silicon nitride film formed over the side wall of the first gate electrode through the first side wall and the third side wall; and   a second silicon nitride film formed over the side wall of the second gate electrode through the second side wall.   
     
     
         3 . A semiconductor device according to the  claim 2 , further comprising:
 a silicon oxide film formed over the first silicon nitride used for an etching stopper.   
     
     
         4 . A semiconductor device according to the  claim 2 ,
 wherein the second side wall extends along the side wall of the second gate electrode and the semiconductor substrate continuously.   
     
     
         5 . A semiconductor device according to the  claim 2 ,
 wherein the second silicon nitride film contacts the second side wall.   
     
     
         6 . A semiconductor device according to the  claim 2 ,
 wherein the first silicon nitride film is for supplying a compressive stress into a channel region of the n-channel transistor, and   wherein the second silicon nitride film is for supplying a compressive stress into a channel region of the p-channel transistor.   
     
     
         7 . A semiconductor device including a first transistor and a first transistor comprising:
 a first gate electrode of the first transistor and a second gate electrode of the second transistor formed over a semiconductor substrate;   a first side wall of silicon oxide film formed over a side wall of the first gate electrode;   a second side wall of silicon oxide film formed over a side wall of the second gate electrode;   a third side wall of silicon nitride film formed over the side wall of the first gate electrode through the first side wall;   a first silicon nitride film formed over the side wall of the first gate electrode through the first side wall and the third side wall; and   a second silicon nitride film formed over the side wall of the second gate electrode through the second side wall.   
     
     
         8 . A semiconductor device according to the  claim 7 , further comprising:
 a silicon oxide film formed over the first silicon nitride used for an etching stopper.   
     
     
         9 . A semiconductor device according to the  claim 7 ,
 wherein the second side wall extends along the side wall of the second gate electrode and the semiconductor substrate continuously.   
     
     
         10 . A semiconductor device according to the  claim 7 ,
 wherein the second silicon nitride film contacts the second side wall.   
     
     
         11 . A semiconductor device according to the  claim 7 ,
 wherein the first silicon nitride film is for supplying a compressive stress into a channel region of the first transistor, and   wherein the second silicon nitride film is for supplying a compressive stress into a channel region of the second transistor.