Fiber-containing resin substrate, device-mounting substrate and device-forming wafer, semiconductor apparatus, and method for producing semiconductor apparatus

Abstract

A fiber-containing resin substrate for collectively encapsulating a semiconductor-device-mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor-device-forming surface of a wafer on which a semiconductor device is formed, including a resin-impregnated fibrous base material which is obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin and has a linear expansion coefficient (ppm/° C.) in an X-Y direction of less than 3 ppm, and an uncured resin layer formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material.

What is claimed is: 
     
         1 . An encapsulated semiconductor-device-mounting substrate, wherein a semiconductor-device-mounting surface of a substrate on which semiconductor devices are mounted is covered with an uncured resin layer of a fiber-containing resin substrate, the fiber-containing resin substrate comprising:
 a resin-impregnated fibrous base material obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin, the resin-impregnated fibrous base material having a linear expansion coefficient in an X-Y direction of less than 3 ppm; and   the uncured resin layer that is formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material; and   the uncured resin layer is heated and cured to collectively encapsulate the semiconductor-device-mounting surface with the fiber-containing resin substrate.   
     
     
         2 . The encapsulated semiconductor-device-mounting substrate according to  claim 1 , wherein the uncured resin layer has a thickness ranging from 20 μm to 2,000 μm. 
     
     
         3 . The encapsulated semiconductor-device-mounting substrate according to  claim 1 , wherein the uncured resin layer is formed of a thermosetting resin that is solidified at temperatures lower than 50° C. and molten at temperatures ranging from 50° C. to 150° C. 
     
     
         4 . The encapsulated semiconductor-device-mounting substrate according to  claim 2 , wherein the uncured resin layer is formed of a thermosetting resin that is solidified at temperatures lower than 50° C. and molten at temperatures ranging from 50° C. to 150° C. 
     
     
         5 . An encapsulated semiconductor-device-forming wafer, wherein a semiconductor-device-forming surface of a wafer on which a semiconductor device is formed is covered with an uncured resin layer of a fiber-containing resin substrate, the fiber-containing resin substrate comprising:
 a resin-impregnated fibrous base material obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin, the resin-impregnated fibrous base material having a linear expansion coefficient in an X-Y direction of less than 3 ppm; and   the uncured resin layer that is formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material; and   the uncured resin layer is heated and cured to collectively encapsulate the semiconductor-device-forming surface with the fiber-containing resin substrate.   
     
     
         6 . The encapsulated semiconductor-device-forming wafer according to  claim 5 , wherein the uncured resin layer has a thickness ranging from 20 μm to 2,000 μm. 
     
     
         7 . The encapsulated semiconductor-device-forming wafer according to  claim 5 , wherein the uncured resin layer is formed of a thermosetting resin that is solidified at temperatures lower than 50° C. and molten at temperatures ranging from 50° C. to 150° C. 
     
     
         8 . The encapsulated semiconductor-device-forming wafer according to  claim 6 , wherein the uncured resin layer is formed of a thermosetting resin that is solidified at temperatures lower than 50° C. and molten at temperatures ranging from 50° C. to 150° C. 
     
     
         9 . The encapsulated semiconductor-device-forming wafer according to  claim 5 , wherein the wafer has a thickness ranging from 30 μm to 100 μm and a diameter of 300 mm or more. 
     
     
         10 . The encapsulated semiconductor-device-forming wafer according to  claim 8 , wherein the wafer has a thickness ranging from 30 μm to 100 μm and a diameter of 300 mm or more. 
     
     
         11 . A semiconductor apparatus, cut by dicing from the encapsulated semiconductor-device-mounting substrate according to  claim 1 . 
     
     
         12 . A semiconductor apparatus, cut by dicing from the encapsulated semiconductor-device-mounting substrate according to  claim 4 . 
     
     
         13 . A method for producing a semiconductor apparatus, the method comprising the steps of:
 covering a semiconductor-device-mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor-device-forming surface of a wafer on which a semiconductor device is formed with an uncured resin layer of a fiber-containing resin substrate, the fiber-containing resin substrate comprising:
 a resin-impregnated fibrous base material obtained by impregnating a fibrous base material with a thermosetting resin and semi-curing or curing the thermosetting resin, the resin-impregnated fibrous base material having a linear expansion coefficient in an X-Y direction of less than 3 ppm; and 
 the uncured resin layer that is formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material; 
   encapsulating the semiconductor-device-mounting surface of the substrate or the semiconductor-device-forming surface of the wafer collectively by heating and curing the uncured resin layer to form an encapsulated semiconductor-device-mounting substrate or an encapsulated semiconductor-device-forming wafer; and   cutting the encapsulated semiconductor-device-mounting substrate or the encapsulated semiconductor-device-forming wafer by dicing into individual pieces of the semiconductor apparatus.   
     
     
         14 . The method for producing a semiconductor apparatus according to  claim 13 , wherein the uncured resin layer has a thickness ranging from 20 μm to 2,000 μm. 
     
     
         15 . The method for producing a semiconductor apparatus according to  claim 13 , wherein the uncured resin layer is formed of a thermosetting resin that is solidified at temperatures lower than 50° C. and molten at temperatures ranging from 50° C. to 150° C. 
     
     
         16 . The method for producing a semiconductor apparatus according to  claim 14 , wherein the uncured resin layer is formed of a thermosetting resin that is solidified at temperatures lower than 50° C. and molten at temperatures ranging from 50° C. to 150° C. 
     
     
         17 . A semiconductor apparatus, cut by dicing from the encapsulated semiconductor-device-forming wafer according to  claim 5 . 
     
     
         18 . A semiconductor apparatus, cut by dicing from the encapsulated semiconductor-device-forming wafer according to  claim 10 .