US2016040282A1PendingUtilityA1

Getter structure and method for forming such structure

Assignee: RAYTHEON COPriority: Feb 28, 2014Filed: Oct 16, 2015Published: Feb 11, 2016
Est. expiryFeb 28, 2034(~7.6 yrs left)· nominal 20-yr term from priority
H10W 76/48H10P 72/0441G01J 5/045C23C 14/28C23C 14/06B32B 2457/00B32B 2255/205G02B 19/00B32B 15/04B32B 3/10Y10T428/24802
46
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Claims

Abstract

A getter structure and method wherein a layer of seed material is deposited on a predetermined region of a surface of a structure under conditions to form a plurality of nucleation sites on a surface of the structure. The nucleation sites have an average height over the surface area of the predetermined region of less than one molecule thick. Subsequently a getter material is deposited over the surface to form a plurality of getter material members projecting outwardly from the nucleation sites.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for forming a getter structure, comprising:
 forming a plurality of nucleation sites of a seed material on a surface of the structure; and   forming a plurality of getter material members projecting outwardly from the nucleation sites.   
     
     
         2 . The method recited in  claim 1  wherein the seed material is formed on a region of the surface having a predetermined surface area and wherein the nucleation sites have an average height over the predetermined surface of less than one molecule thick. 
     
     
         3 . The method recited in  claim 2  wherein the getter material is titanium. 
     
     
         4 . A method for forming a getter structure, comprising:
 depositing a layer of seed material on a surface of a structure under conditions to form a plurality of nucleation sites on a surface of the structure; and   subsequently depositing a getter material over the surface to form a plurality of getter material members projecting outwardly from the nucleation sites.   
     
     
         5 . The method recited in  claim 4  wherein the deposition is flash evaporation or electron -beam deposition. 
     
     
         6 . The method recited in  claim 4  including oxidizing the nucleation sites prior to the getter material deposition. 
     
     
         7 . The method recited. in  claim 4  wherein the seed material is formed on a region of the surface having a predetermined surface area and wherein the nucleation sites have an average height over the predetermined surface of less than one molecule thick.

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