US2016032227A1PendingUtilityA1

Cleaning composition for semiconductor substrate and cleaning method

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Assignee: JSR CORPPriority: Jul 31, 2014Filed: Jul 28, 2015Published: Feb 4, 2016
Est. expiryJul 31, 2034(~8 yrs left)· nominal 20-yr term from priority
Inventors:Kenji MochidaMotoyuki Shima
H10P 70/15C11D 3/373C08F 132/08C11D 7/50C08F 120/18C11D 3/245C08F 120/28C11D 3/2086C08F 120/24C11D 3/43C08K 5/092C11D 11/0058C11D 11/0047C11D 2111/42C11D 2111/22B08B 7/0014
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Claims

Abstract

A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.

Claims

exact text as granted — not AI-modified
1 . A cleaning composition for a semiconductor substrate comprising:
 a solvent; and   a polymer comprising a fluorine atom, a silicon atom or a combination thereof.   
     
     
         2 . The cleaning composition according to  claim 1 , wherein a content of water in the solvent is no greater than 20% by mass. 
     
     
         3 . The cleaning composition according to  claim 1 , further comprising an organic acid which is a non-polymeric acid. 
     
     
         4 . The cleaning composition according to  claim 3 , wherein the organic acid is a polyhydric carboxylic acid. 
     
     
         5 . The cleaning composition according to  claim 3 , wherein an acid dissociation constant of the polymer is smaller than an acid dissociation constant of the organic acid. 
     
     
         6 . The cleaning composition according to  claim 3 , wherein a solubility of the organic acid in water at 25° C. is no less than 5% by mass. 
     
     
         7 . The cleaning composition according to  claim 3 , wherein the organic acid is a solid at 25° C. 
     
     
         8 . A cleaning method comprising:
 coating a cleaning composition on a surface of a semiconductor substrate to form a film, the cleaning composition comprising a solvent and a polymer which comprises a fluorine atom, a silicon atom or a combination thereof; and   removing the film from the substrate.   
     
     
         9 . The cleaning method according to  claim 8 , wherein a content of water in the solvent is no greater than 20% by mass. 
     
     
         10 . The cleaning method according to  claim 8 , further comprising an organic acid which is a non-polymeric acid. 
     
     
         11 . The cleaning method according to  claim 10 , wherein the organic acid is a polyhydric carboxylic acid. 
     
     
         12 . The cleaning method according to  claim 10 , wherein an acid dissociation constant of the polymer is smaller than an acid dissociation constant of the organic acid. 
     
     
         13 . The cleaning method according to  claim 10 , wherein a solubility of the organic acid in water at 25° C. is no less than 5% by mass. 
     
     
         14 . The cleaning method according to  claim 10 , wherein the organic acid is a solid at 25° C.

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