Method of manufacturing a semiconductor device using photolithographic rinse solution

Abstract

A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

1 .- 10 . (canceled) 
     
     
         11 . A method of manufacturing a semiconductor device, the method comprising:
 coating a photoresist on a substrate;   performing an exposure process and a development process on the photoresist to form a photoresist pattern; and   cleaning the developed photoresist pattern with a rinse solution,   wherein:
 the development process is a negative-tone development (NTD) process; and 
 the rinse solution includes an organic solvent. 
   
     
     
         12 . The method as claimed in  claim 11 , wherein the organic solvent includes one of acetone, ethanol, isopropanol, n-decane (DEC), n-heptane, n-hexane, n-octane, perfluoroheptane, perfluorohexane, or perfluorooctane. 
     
     
         13 . The method as claimed in  claim 11 , wherein the organic solvent has a surface tension within a range of about 5 mN/m to about 25 mN/m. 
     
     
         14 . The method as claimed in  claim 11 , wherein:
 the rinse solution includes one of acetone, n-decane (DEC), n-heptane, n-hexane, n-octane, perfluoroheptane, perfluorohexane, or perfluorooctane; and   the rinse solution further includes one of ethanol, isopropanol, or t-butyl alcohol.   
     
     
         15 .- 20 . (canceled)