Capacitor and method of manufacturing the same

Abstract

A capacitor includes a substrate, a multilayer over the substrate, a plurality of container-shaped storage node structures on the semiconductor substrate and surrounded by the multilayer, the storage node structure has a sidewall extending upwardly from the base to the top, where the sidewall includes an upper segment and a lower segment thinner than the upper segment, a capacitor dielectric material along a surface of each storage node structure, and a capacitor electrode material over the capacitor dielectric material.

What is claimed is: 
     
         1 . A capacitor, comprising:
 a substrate;   a multilayer over said substrate, wherein said multilayer comprises an isolation layer on said substrate, a stack material layer on said isolation layer, an upper lattice layer on top of said stack material layer, and at least one lower lattice layer in said stack material layer;   a plurality of container-shaped storage node structures on said semiconductor substrate and surrounded by said multilayer, said storage node structure having a base, a sidewall extending upwardly from said base to the top of said storage node structure, wherein said sidewall comprises an upper segment and a lower segment thinner than said upper segment;   a capacitor dielectric material along a surface of each said storage node structure; and   a capacitor electrode material over said capacitor dielectric material, with the capacitor electrode material being capacitively coupled to said storage node structure through said capacitor dielectric material.   
     
     
         2 . The capacitor according to  claim 1 , further comprising an implant region under each said storage node structure. 
     
     
         3 . The capacitor according to  claim 1 , wherein said at least one lower lattice layer is located between said upper segment and said lower segment. 
     
     
         4 . The capacitor according to  claim 1 , wherein the top surface of said storage node structure is coplanar with the top surface of said upper lattice layer. 
     
     
         5 . The capacitor according to  claim 1 , wherein the material of said upper lattice layer, said at least one lower lattice layer and said isolation layer comprises silicon nitride. 
     
     
         6 . The capacitor according to  claim 1 , wherein the material of said storage node structure comprises titanium nitride. 
     
     
         7 . The capacitor according to  claim 1 , wherein the material of said stack material layer comprises poly-silicon. 
     
     
         8 . The capacitor according to  claim 1 , wherein the height of said storage node structure is within a range from 15,000 Å to 20,000 Å. 
     
     
         9 . The capacitor according to  claim 1 , wherein the thickness of said upper segment is less than or equal to one-half of the thickness of said lower segment. 
     
     
         10 . The capacitor according to  claim 1 , wherein the thickness of said upper segment is less than 40 Å.