Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and information processing apparatus

Abstract

A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector on the substrate including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; an active region on or above the first reflector; a second semiconductor multilayer reflector on or above the active region including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; and a cavity extending region formed between the first reflector and the active region or between the second reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, including a conductive semiconductor material, and including an optical loss causing layer at at least one node of a standing wave of a selected longitudinal mode.

What is claimed is: 
     
         1 . A surface emitting semiconductor laser comprising:
 a substrate;   a first semiconductor multilayer reflector formed on the substrate, and including laminated pairs of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index;   an active region formed on or above the first semiconductor multilayer reflector;   a second semiconductor multilayer reflector formed on or above the active region, and including laminated pairs of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index; and   a cavity extending region formed between the first semiconductor multilayer reflector and the active region or between the second semiconductor multilayer reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, and including a conductive semiconductor material,   wherein the cavity extending region includes a first optical loss causing layer at the position of a first node of a standing wave of a selected longitudinal mode, and a second optical loss causing layer at a position of a second node of the standing wave of the selected longitudinal mode.