Method of forming a magnetic tunnel junction structure

Abstract

In a particular embodiment, an apparatus is disclosed that includes a first electrode and a magnetic tunnel junction (MTJ) structure coupled to the first electrode. A second electrode is coupled to the MTJ structure, the second electrode having a first sidewall. A spacer layer is coupled to the first electrode, the first sidewall of the second electrode, and a sidewall of the MTJ structure. A third electrode is coupled to the second electrode, where the first sidewall of the second electrode contacts a bottom surface of the third electrode at a right angle.

What is claimed is: 
     
         1 . An apparatus formed by a process comprising:
 forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate;   depositing a sacrificial layer on the conductive layer, the sacrificial layer comprising silicon carbon;   depositing an amorphous carbon layer on the sacrificial layer, the sacrificial layer having a chemical structure that has substantially no impact on a resolution of a pattern definition with respect to the amorphous carbon layer;   depositing one or more hard mask layers on the amorphous carbon layer;   patterning and removing the one or more hard mask layers and the amorphous carbon layer;   depositing a non-magnetic spacer film on an exposed portion of the sacrificial layer, the exposed portion caused by the patterning and removal of the one or more hard mask layers and the amorphous carbon layer, wherein the sacrificial layer is comprised of the same material as the non-magnetic spacer film;   removing the sacrificial layer; and   depositing a second conductive layer on the conductive layer of the MTJ structure after removal of the sacrificial layer.   
     
     
         2 . The apparatus of  claim 1 , wherein a sidewall of the conductive layer of the MTJ structure contacts a bottom surface of the second conductive layer at a right angle. 
     
     
         3 . The apparatus of  claim 2 , wherein a second sidewall of the conductive layer of the MTJ structure contacts the bottom surface of the second conductive layer at a second right angle. 
     
     
         4 . The apparatus of  claim 1 , wherein a sidewall of the non-magnetic spacer film contacts a bottom surface of the second conductive layer at a right angle. 
     
     
         5 . The apparatus of  claim 1 , wherein a top surface of the non-magnetic spacer film is substantially even with a top surface of the conductive layer. 
     
     
         6 . The apparatus of  claim 1 , wherein a first sidewall of the non-magnetic spacer film is substantially even with a second sidewall of the conductive layer of the MTJ structure. 
     
     
         7 . The apparatus of  claim 1 , wherein the sacrificial layer has a photo resolution having a range of approximately 10 angstroms to approximately 5000 angstroms. 
     
     
         8 . The apparatus of  claim 1 , wherein the sacrificial layer further comprises Silicon Oxynitride, Silicon Nitride, Titanium Nitride, or a combination thereof. 
     
     
         9 . The apparatus of  claim 1 , wherein the conductive layer comprises Titanium (Ti), Ruthenium (Ru), Tantalum, or a combination thereof. 
     
     
         10 . An apparatus, comprising:
 a first electrode;   a magnetic tunnel junction (MTJ) structure coupled to the first electrode, the MTJ structure including a tunnel barrier layer between two magnetic layers;   a second electrode coupled to the MTJ structure, the second electrode having a first sidewall;   a spacer layer coupled to the first electrode, the first sidewall of the second electrode, and a sidewall of the MTJ structure; and   a third electrode coupled to the second electrode, the first sidewall of the second electrode contacting a bottom surface of the third electrode at a right angle.   
     
     
         11 . The apparatus of  claim 10 , wherein the right angle is formed by depositing a sacrificial layer on the second electrode, wherein the sacrificial layer is removed prior to etching of the spacer layer and prior to deposition of the third electrode on the second electrode. 
     
     
         12 . The apparatus of  claim 11 , wherein a top surface of the spacer layer is substantially even with a top surface of the second electrode. 
     
     
         13 . The apparatus of  claim 12 , wherein the bottom surface of the third electrode contacts the top surface of the spacer layer and the top surface of the second electrode. 
     
     
         14 . The apparatus of  claim 11 , wherein the sacrificial layer has a photo resolution having a range of approximately 10 angstroms to approximately 5000 angstroms. 
     
     
         15 . The apparatus of  claim 11 , wherein the sacrificial layer further comprises Silicon Carbon, Silicon Oxynitride, Silicon Nitride, Titanium Nitride, or a combination thereof. 
     
     
         16 . The apparatus of  claim 10 , wherein a sidewall of the spacer layer contacts the bottom surface of the third electrode at a second right angle. 
     
     
         17 . The apparatus of  claim 10 , wherein the second electrode includes a second sidewall that contacts the bottom surface of the third electrode at a second right angle. 
     
     
         18 . An apparatus, comprising:
 first means for conducting;   means for tunneling current coupled to the first means for conducting, the means for tunneling current including a tunnel barrier layer between two magnetic layers;   second means for conducting coupled to the means for tunneling current, the second means for conducting having a first sidewall and a second sidewall;   means for isolating the means for tunneling current, the means for isolating coupled to the first means for conducting, the first sidewall of the second means for conducting, and a sidewall of the means for tunneling current; and   third means for conducting coupled to the second means for conducting, at least one of the first sidewall or the second sidewall of the second means for conducting contacting a bottom surface of the third means for conducting at a right angle.   
     
     
         19 . The apparatus of  claim 18 , wherein the first sidewall of the second means for conducting contacts the bottom surface of the third means for conducting at a first right angle, and the second sidewall of the second means for conducting contacts the bottom surface of the third means for conducting at a second right angle. 
     
     
         20 . The apparatus of  claim 18 , wherein a top surface of the means for isolating is substantially even with a top surface of the second means for conducting.