System-in-package

Abstract

A system-in-package includes a package carrier; a first semiconductor die having a die face and a die edge, the first semiconductor die being assembled face-down to a chip side of the package carrier, wherein a plurality of contact pads are situated on the die face; a second semiconductor die mounted on the package carrier and adjacent to the first semiconductor die; a rewiring laminate structure between the first semiconductor die and the package carrier, the rewiring laminate structure comprising a re-routed metal layer, wherein at least a portion of the re-routed metal layer projects beyond the die edge; and a plurality of copper pillar bumps arranged on the rewiring laminate structure for electrically connecting the first semiconductor die with the package carrier.

What is claimed is: 
     
         1 . A system-in-package, comprising:
 a package carrier;   a first semiconductor die having a die face and a die edge, the first semiconductor die being assembled face-down to a chip side of the package carrier, wherein a plurality of contact pads are situated on the die face;   a second semiconductor die mounted on the package carrier adjacent to the first semiconductor die;   a rewiring laminate structure between the first semiconductor die and the package carrier, the rewiring laminate structure comprising a re-routed metal layer, wherein at least a portion of the re-routed metal layer projects beyond the die edge; and   a plurality of copper pillars arranged on the rewiring laminate structure for electrically connecting the first semiconductor die with the package carrier.   
     
     
         2 . The system-in-package according to  claim 1  further comprising an underfill between the rewiring laminate structure and the package carrier. 
     
     
         3 . The system-in-package according to  claim 1  wherein the package carrier is a substrate comprising two metal wiring layers disposed on the chip side and on an opposite side of the package carrier respectively. 
     
     
         4 . The system-in-package according to  claim 3  wherein the two metal wiring layers are electrically interconnected to each other by means of plated through holes that are formed in the package carrier by mechanical drilling methods. 
     
     
         5 . The system-in-package according to  claim 1  wherein the re-routed metal layer redistributes the contact pads on the die face of the first semiconductor die to form fan-out bond pads, and the plurality of bumps are arranged on the fan-out bond pads respectively. 
     
     
         6 . The system-in-package according to  claim 1  wherein the second semiconductor die has a contact/bond pad pitch that is substantially equal to a bump pitch applied between the second semiconductor die and the package carrier. 
     
     
         7 . The system-in-package according to  claim 1  wherein the first semiconductor die has a contact/bond pad pitch smaller than that of the second semiconductor die. 
     
     
         8 . The system-in-package according to  claim 1  further comprising a mold cap encapsulating at least a portion of the first semiconductor die. 
     
     
         9 . The system-in-package according to  claim 1  further comprising a molding compound encapsulating the first semiconductor die and the second semiconductor die. 
     
     
         10 . The system-in-package according to  claim 9  wherein the molding compound fills gaps between the first semiconductor die and the package substrate and between the second semiconductor die and the package substrate. 
     
     
         11 . The system-in-package according to  claim 1  wherein the first semiconductor die is a baseband chip, an RF chip or a SoC chip. 
     
     
         12 . The system-in-package according to  claim 11  wherein the second semiconductor die is a power-management IC (PMIC), a WiFi chip, an FM chip, a GPS chip or a bluetooth chip. 
     
     
         13 . A system-in-package, comprising:
 a package carrier having a chip side and an opposite side;
 a fan-out wafer level device comprising a first semiconductor die mounted on the chip side of the package carrier and a plurality of copper pillars for electrically connecting the first semiconductor die with the package carrier; 
 a second semiconductor die mounted on the chip side of the package carrier and adjacent to the fan-out wafer level device and 
 an underfill between the package carrier and the fan-out wafer level device. 
   
     
     
         14 . The system-in-package according to  claim 13  wherein the fan-out wafer level device comprises:
 a mold cap encapsulating at least a portion of the first semiconductor die; and 
 a redistribution layer for fan out contact pads of the first semiconductor die. 
 
     
     
         15 . The system-in-package according to  claim 13  wherein the package carrier is a substrate comprising two metal wiring layers disposed on the chip side and on the opposite side of the package carrier respectively. 
     
     
         16 . The system-in-package according to  claim 13  wherein the second semiconductor die has a contact/bond pad pitch that is substantially equal to a bump pitch applied between the second semiconductor die and the package carrier. 
     
     
         17 . The system-in-package according to  claim 13  wherein the first semiconductor die is a baseband chip, an RF chip or a SoC chip. 
     
     
         18 . The system-in-package according to  claim 17  wherein the second semiconductor die is a power-management IC (PMIC), a WiFi chip, an FM chip, a GPS chip or a bluetooth chip. 
     
     
         19 . A system-in-package, comprising:
 a package carrier having a chip side and an opposite side;   a first semiconductor die having a die face and a die edge, the first semiconductor die being assembled face-down to the chip side of the package carrier, wherein a plurality of contact pads are situated on the die face;   a second semiconductor die mounted on the chip side of the package carrier and adjacent to the first semiconductor die;
 a rewiring laminate structure between the first semiconductor die and the package carrier, the rewiring laminate structure comprising a re-routed metal layer, wherein at least a portion of the re-routed metal layer projects beyond the die edge; 
   a plurality of copper pillars arranged on the rewiring laminate structure for electrically connecting the first semiconductor die with the package carrier; and   a plurality of solder balls on the opposite side of the substrate.   
     
     
         20 . The system-in-package according to  claim 19  wherein the package carrier comprises two metal wiring layers disposed on the chip side and on the opposite side respectively, and wherein the two metal wiring layers are electrically interconnected to each other by means of plated through holes that are formed by mechanical drilling methods. 
     
     
         21 . The system-in-package according to  claim 19  further comprising an underfill between the rewiring laminate structure and the package carrier. 
     
     
         22 . The system-in-package according to  claim 19  wherein the second semiconductor die has a contact/bond pad pitch that is substantially equal to a bump pitch applied between the second semiconductor die and the package carrier.