Counter for write operations at a data storage device

Abstract

A data storage device includes a resistive random access memory (ReRAM). A method includes storing data in the ReRAM by performing a first number of write operations to a storage region of the ReRAM. The storage region is tracked by a counter. The method further includes incrementing a value of the counter a second number of times responsive to storing the data in storage region. The second number is less than the first number.

What is claimed is: 
     
         1 . A method comprising:
 at a data storage device including a resistive random access memory (ReRAM), performing:
 storing data in the ReRAM by performing a first number of write operations to a storage region of the ReRAM, the storage region tracked by a counter; and 
 incrementing a value of the counter a second number of times responsive to storing the data in the storage region, wherein the second number is different than the first number. 
   
     
     
         2 . The method of  claim 1 , further comprising determining a ratio between a number of cells programmed by a first write operation of the write operations and a normalization parameter. 
     
     
         3 . The method of  claim 2 , wherein the normalization parameter corresponds to a data block size of the ReRAM. 
     
     
         4 . The method of  claim 3 , wherein the first write operation writes first data to the ReRAM, the first data having the data block size. 
     
     
         5 . The method of  claim 4 , wherein the write operations further include a second write operation, and wherein the second write operation writes second data to the ReRAM, the second data having a data size that is less than the data block size. 
     
     
         6 . The method of  claim 5 , wherein the second data corresponds to a modification of one or more values of the first data. 
     
     
         7 . The method of  claim 2 , further comprising, for each of the write operations, determining a number such that a probability of the number being equal to one corresponds to the ratio. 
     
     
         8 . The method of  claim 7 , wherein the value of the counter is incremented by a controller of the data storage device each time the number is equal to one. 
     
     
         9 . The method of  claim 1 , wherein the value of the counter approximates a number of program/erase (P/E) cycles associated with the storage region of the ReRAM. 
     
     
         10 . The method of  claim 1 , wherein a storage capacity of the storage region is less than a total storage capacity of the ReRAM, and wherein the second number is less than the first number. 
     
     
         11 . The method of  claim 1 , wherein the ReRAM has a three-dimensional (3D) memory configuration. 
     
     
         12 . A data storage device comprising:
 a resistive random access memory (ReRAM);   a counter configured to track a storage region of the ReRAM; and   a controller, wherein the controller is coupled to the ReRAM, wherein the controller is configured to perform a first number of write operations to the storage region and to increment a value of the counter a second number of times responsive to storing data in the storage region, wherein the second number is less than the first number.   
     
     
         13 . The data storage device of  claim 12 , wherein the controller is further configured to determine a ratio between a number of cells programmed by a first write operation of the write operations and a normalization parameter. 
     
     
         14 . The data storage device of  claim 13 , wherein the value of the counter statistically indicates a number of program/erase (P/E) cycles associated with the storage region. 
     
     
         15 . The data storage device of  claim 13 , wherein the normalization parameter corresponds to a data block size of the ReRAM. 
     
     
         16 . The data storage device of  claim 15 , wherein the first write operation writes first data to the ReRAM, and wherein the first data has the data block size. 
     
     
         17 . The data storage device of  claim 16 , wherein the write operations further include a second write operation, and wherein the second write operation writes second data to the ReRAM, the second data having a data size that is less than the data block size. 
     
     
         18 . The data storage device of  claim 13 , wherein the controller includes a pseudo-random number generator (PRNG) that is configured to generate a number, for each of the write operations, such that a probability of the number being equal to one corresponds to the ratio. 
     
     
         19 . The data storage device of  claim 12 , wherein the controller further includes multiple counters corresponding to multiple storage regions of the ReRAM. 
     
     
         20 . The data storage device of  claim 12 , further comprising a memory die, wherein the memory die includes the ReRAM, and wherein the controller includes the counter.