US2016001320A1PendingUtilityA1
Apparatus and method for deposition for organic thin films
Est. expiryAug 16, 2027(~1.1 yrs left)· nominal 20-yr term from priority
H10K 71/40H01L 51/0008B05D 3/002B05D 1/60H10K 71/00C23C 14/228H10K 71/164B05D 7/52C23C 14/12C23C 14/243C23C 14/24H10K 71/16B05D 7/56
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Claims
Abstract
The invention provides apparatus and methods for organic continuum vapor deposition of organic materials on large area substrates.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of depositing an organic thin film onto a substrate, comprising:
heating an organic material, forming an organic vapor; transporting the organic vapor in a carrier gas from a heated source cell into a chamber, wherein a back plate of the chamber is heated, the source cell being positioned at the back plate; heating the chamber sufficiently to form a substantially uniform organic flux of the carrier gas and organic vapor by diffusive mixing of the gas and vapor within the heated chamber; directing the uniform organic flux to a cooled substrate; and depositing the organic material onto a surface of the cooled substrate, thereby forming an organic film on the substrate.
2 . The method of claim 1 , wherein the chamber is heated by supplying heat from all walls of the chamber.
3 . The method according to claim 1 , wherein the chamber has a length to width ratio of at least about 0.75.
4 . The method according to claim 1 , wherein the uniform organic flux is a steady state flux.
5 . The method according to claim 1 , wherein the uniform organic flux is directed to the cooled substrate by a pressure differential.
6 . The method according to claim 1 , further comprising positioning the source cell, so that the output is aligned with the center of the cooled substrate.
7 . The method according to claim 1 , further comprising depositing a plurality of organic materials from a plurality of source cells.
8 . The method according to claim 7 , further comprising depositing the plurality of organic materials successively.
9 . The method according to claim 7 , further comprising depositing the plurality of organic materials simultaneously.
10 . The method according to claim 9 , further comprising forming the organic vapors of the organic materials in a series of successive source cells, wherein organic vapor produced in one cell passes through at least one additional source cell.
11 . The method according to claim 1 , further comprising controlling vapor flow from the source cell with a valve within a source cell.
12 . The method according to claim 1 , further comprising controlling vapor flow from a source cell by moving a stopper relative to an opening in the source cell, wherein the stopper has a shape that corresponds to that of the opening, and stops the vapor flow when the stopper is moved fully into the opening.
13 . The method according to claim 12 , further comprising opening a bypass line when the opening of the source cell is closed by the stopper.
14 . The method according to claim 1 , further comprising maintaining the cooled substrate at a temperature sufficiently low to reduce the organic material concentration in a region directly above the surface of the cooled substrate to a concentration substantially less than the organic material concentration in the rest of the heated chamber.
15 . The method according to claim 1 , further comprising maintaining a flow rate of the organic vapor and carrier gas sufficient to maintain the organic vapor in the heated chamber at a substantially uniform concentration other than in the region directly above the surface of the cooled substrate.Join the waitlist — get patent alerts
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