Light Emitter With Coating Layers

Abstract

A laser apparatus may comprise: a substrate having a first surface and a second surface opposite to the first surface; a light emitting region formed on the first surface of the first substrate, the light emitting region including a p-type semiconductor layer and an n-type semiconductor layer; a p-contact layer formed on the p-type semiconductor layer; an n-contact layer formed on the n-type semiconductor layer; a sub-mount formed on the p-contact layer and the n-contact layer, the sub-mount including a first patterned dielectric coating layer formed on the p-contact layer and a reflector formed on the patterned dielectric coating layer.

What is claimed is: 
     
         1 . A light emitting device comprising:
 a substrate having a first surface and a second surface opposite to the first surface;   a light emitting region formed on the first surface of the first substrate, the light emitting region including a p-type semiconductor layer and an n-type semiconductor layer;   a p-contact layer formed on the p-type semiconductor layer;   an n-contact layer formed on the n-type semiconductor layer;   a sub-mount formed on the p-contact layer and the n-contact layer, the sub-mount including a first patterned dielectric coating layer formed on the p-contact layer and a reflector formed on the patterned dielectric coating layer.   
     
     
         2 . The light emitting device of  claim 1 , wherein the first patterned dielectric coating layer comprises metal-oxide. 
     
     
         3 . The light emitting device of  claim 2 , wherein the first patterned dielectric coating layer comprises a material chosen from a group consisting of Ta 2 O 5 , Nb 2 O 5  and TiO 2 . 
     
     
         4 . The light emitting device of  claim 3 , wherein the first patterned dielectric coating layer comprises Nb 2 O 5 . 
     
     
         5 . The light emitting device of  claim 1 , wherein the first patterned dielectric coating layer comprises a material chosen from a group consisting of metal oxide, silicon carbide, GaN, Ta 2 O 5 , Nb 2 O 5 , TiO 2 , AlInGaN based solid solutions. 
     
     
         6 . The light emitting device of  claim 1 , wherein the light emitting region comprises:
 an n-type semiconductor cap layer;   an active region of an AiInGaN material system, the n-type semiconductor cap layer formed between the active region and the substrate; and   a p-type semiconductor cap layer.   
     
     
         7 . The light emitting device of  claim 1 , further comprising:
 a second patterned dielectric coating layer formed on the second surface of the substrate, the second patterned dielectric coating layer having a patterned surface constituting a surface area for light emission.   
     
     
         8 . The light emitting device of  claim 7 , wherein the patterned surface of the second patterned dielectric coating layer is continuously patterned. 
     
     
         9 . The light emitting device of  claim 8 , wherein the second patterned dielectric coating layer comprises metal-oxide. 
     
     
         10 . The light emitting device of  claim 8 , wherein the second patterned dielectric coating layer comprises a material chosen from a group consisting of metal oxide, silicon carbide, GaN, Ta 2 O 5 , Nb 2 O 5 , TiO 2 , AlInGaN based solid solutions.