Shielding film for a light receiving element and optically coupled insulating device

Abstract

A light receiving element includes: a semiconductor layer; an insulating layer; an interconnect layer; and a film. The semiconductor layer includes a light receiving unit configured to convert a signal light incident on the light receiving unit into an electrical signal. The insulating layer is provided on the semiconductor layer. The interconnect layer is provided on the insulating layer. The film is provided on the insulating layer to cover the light receiving unit and be connected to the interconnect layer, the film being made of a metal or a metal nitride.

What is claimed is: 
     
         1 . A light receiving element, comprising:
 a semiconductor layer including a light receiving portion;   an insulating layer provided on the semiconductor layer;   an interconnect layer provided on the insulating layer; and   a film provided on the insulating layer to cover the light receiving portion and be connected to the interconnect layer, wherein   the film is a metal or a metal nitride including at least one selected from Ti, Ta, Zr, V and Nb.   
     
     
         2 . The element according to  claim 1 , wherein the interconnect layer includes layers, a part of the insulating layer being provided between the layers. 
     
     
         3 . The element according to  claim 2 , wherein the layers are connected at a prescribed location. 
     
     
         4 . The element according to  claim 2 , wherein the film is connected to an upper surface of a top layer of the layers. 
     
     
         5 . The element according to  claim 4 , wherein the film is provided to contact a portion of the upper surface of the top layer. 
     
     
         6 . The element according to  claim 2 , wherein the film is provided to contact at least one of the layers. 
     
     
         7 . The element according to  claim 1 , wherein
 the light receiving unit includes an anode and a cathode, and   the film is connected to the anode or the cathode via the interconnect layer.   
     
     
         8 . The element according to  claim 1 , wherein
 the semiconductor layer further includes a signal processing circuit unit connected to the light receiving portion to process and output the electrical signal, and   the film is connected to a ground of the signal processing circuit unit via the interconnect layer.   
     
     
         9 . The element according to  claim 1 , wherein the film has a thickness of not more than 21 nm. 
     
     
         10 . An optically coupled insulating device, comprising:
 a light receiving element including a semiconductor layer, an insulating layer, an interconnect layer, and a film, the semiconductor layer including a light receiving portion, the insulating layer being provided on the semiconductor layer, the interconnect layer being provided on the insulating layer, the film being provided on the insulating layer to cover the light receiving portion and be connected to the interconnect layer, wherein the film is a metal or a metal nitride including at least one selected from Ti, Ta, Zr, V and Nb;   a light emitting element configured to irradiate the signal light toward the light receiving portion;   a signal input unit, the light emitting element being provided on the signal input unit; and   an output unit insulated from the signal input unit, the light receiving element being provided on the output unit.   
     
     
         11 . The device according to  claim 10 , wherein the film has a thickness of not more than 21 nm.