Diode having a plate-shaped semiconductor element

Abstract

A diode is provided having a plate-shaped semiconductor element that includes a first side and a second side, the first side being connected by a first connecting layer to a first metallic contact and the second side being connected by a second connecting layer to a second metallic contact, the first side having a diode element in a middle area and having a further diode element in an edge area of the first side, which has crystal defects as a result of a separating process of the plate-shaped semiconductor element, the first connecting layer only establishing an electrical contact to the diode element and not to the further diode element and, on the first side, the further diode element having an exposed contact, which may be electrically contacted by the first connecting layer.

What is claimed is: 
     
         1 . A diode, comprising:
 a plate-shaped semiconductor element that includes a first side and a second side;   a first metallic contact;   a first connecting layer for connecting the first side to the first metallic contact;   a second metallic contact; and   a second connecting layer for connecting the second side the second metallic contact, wherein:
 the first side includes a diode element in a middle area and a further diode element in an edge area of the first side, 
 the further diode includes crystal defects as a result of a separating process of the plate-shaped semiconductor element, 
 the first connecting layer only establishes an electrical contact to the diode element and not to the further diode element, and 
 on the first side, the further diode element includes an exposed contact that is electrically contactable by the first connecting layer. 
   
     
     
         2 . The diode as recited in  claim 1 , wherein, in the event of an incorrect arrangement of the first connecting layer on the first side one of during manufacturing and during an operation of the diode, an electrical contact takes place to the exposed contact of the further diode element. 
     
     
         3 . The diode as recited in  claim 1 , wherein during the separating process, the semiconductor element is separated from a larger plate by a sawing that introduces the crystal defects into the edge area. 
     
     
         4 . The diode as recited in  claim 1 , wherein the first diode element is one of a p-n diode, a Schottky diode, an MOS field effect transistor, and an MOS field effect transistor having an electrically connected gate, body region, and source region. 
     
     
         5 . The diode as recited in  claim 1 , wherein the further diode is implemented as a p-n diode. 
     
     
         6 . The diode as recited in  claim 1 , wherein the first connecting layer is one of a soldered layer and a sintered layer. 
     
     
         7 . The diode as recited in  claim 1 , wherein the exposed contact includes a further metal layer. 
     
     
         8 . The diode as recited in  claim 7 , wherein the further metal layer is implemented as circumferential metal strips. 
     
     
         9 . The diode as recited in  claim 1 , wherein a lateral distance between the diode and the further diode is greater than a width of a space charge zone of the diode on an upper side of the semiconductor element. 
     
     
         10 . The diode as recited in  claim 1 , wherein a lateral extension of the further diode is at least as large as a thickness of the first connecting layer.