Solid-state image pickup device, method of fabricating the same, and camera module

Abstract

According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion lements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

What is claimed is: 
     
         1 . A method of fabricating a solid-state image pickup device including photoelectric conversion elements corresponding to pixels of a picked-up image, the method comprising:
 two-dimensionally forming first conductive semiconductor regions on a semiconductor substrate in a matrix; and   forming second conductive semiconductor regions corresponding to the respective first conductive semiconductor regions so that junction planes between the first conductive semiconductor regions and the second conductive semiconductor regions are uneven.   
     
     
         2 . The method of fabricating the solid-state image pickup device according to  claim 1 , wherein the second conductive semiconductor region is formed so that the junction plane includes striped concave/convex portions in parallel with a light-receiving surface of the photoelectric conversion element. 
     
     
         3 . The method of fabricating the solid-state image pickup device according to  claim 2 , wherein the striped concave/convex portions are formed in a lattice pattern. 
     
     
         4 . The method of fabricating the solid-state image pickup device according to  claim 1 , wherein the second conductive semiconductor region is formed so that the junction plane includes dotted concave/convex portions. 
     
     
         5 . The method of fabricating the solid-state image pickup device according to  claim 1 , wherein the second conductive semiconductor region is formed by providing a first second-conductive region on a surface of a side which light enters in the first conductive semiconductor region and forming a second second-conductive region that protrudes toward the first conductive semiconductor region from a junction plane between the first second-conductive region and the first conductive semiconductor region. 
     
     
         6 . The method of fabricating the solid-state image pickup device according to  claim 5 , wherein the first conductive semiconductor region is formed by providing a first first-conductive region on a semiconductor substrate and forming a second first-conductive region that protrudes toward the semiconductor substrate from a junction plane between the first first-conductive region and the semiconductor substrate. 
     
     
         7 . The method of fabricating the solid-state image pickup device according to  claim 1 , wherein a second conductive semiconductor region is further formed inside the first conductive semiconductor region. 
     
     
         8 . The method of fabricating the solid-state image pickup device according to  claim 5 , wherein a trench is formed toward an inside of the second region from a surface of a side of a second region, which light enters, in the second conductive semiconductor region, and an insulation region is formed inside the trench by an insulator. 
     
     
         9 . The method of fabricating the solid-state image pickup device according to  claim 5 , wherein a trench is formed toward an inside of the second region from a surface of a side of a second region, which light enters, in the second conductive semiconductor region,
 a conductive region is formed inside the trench by a conductor, and   a power supply that applies negative voltage and the conductive region are connected to each other through the wiring.