Semiconductor structures including self-assembled polymer domains registered to the underlying self-assembled polymer domains, templates comprising the same, and methods of forming the same

Abstract

A semiconductor structure comprises a first self-assembled block copolymer material within a trench in a substrate and a second self-assembled block copolymer material overlying the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises self-assembled polymer domains registered to sidewalls of the trench and extending a length of the trench. The second self-assembled block copolymer material comprises self-assembled polymer domains overlying and registered to the self-assembled polymer domains of the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises a different material from the first self-assembled block copolymer material. A template comprises lines extending a length of a trench in a substrate and separated by openings exposing a floor of the trench in a substrate. Each of the lines comprises the first self-assembled block copolymer material and the second self-assembled block copolymer material overlying the first self-assembled block copolymer material.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a first self-assembled block copolymer material within a trench in a substrate, the first self-assembled block copolymer material comprising self-assembled polymer domains registered to sidewalls of the trench and extending a length of the trench; and   a second self-assembled block copolymer material overlying the first self-assembled block copolymer material, the second self-assembled block copolymer material comprising self-assembled polymer domains overlying and registered to the self-assembled polymer domains of the first self-assembled block copolymer material,   wherein the first self-assembled block copolymer material comprises a different material from the second self-assembled block copolymer material.   
     
     
         2 . The semiconductor structure of  claim 1 , wherein the first self-assembled block copolymer material comprises alternating lamellar domains perpendicular to a floor of the trench and parallel to the sidewalls of the trench. 
     
     
         3 . The semiconductor structure of  claim 2 , wherein the second self-assembled block copolymer material comprises alternating lamellar domains overlying and registered to the alternating lamellar domains of the first self-assembled block copolymer material, the overlying alternating lamellar domains perpendicular to the floor of the trench and parallel to the sidewalls. 
     
     
         4 . The semiconductor structure of  claim 1 , wherein the first self-assembled block copolymer material comprises self-assembled cylindrical domains perpendicular to a floor of the trench. 
     
     
         5 . The semiconductor structure of  claim 4 , wherein the first self-assembled block copolymer material comprises a single row of the self-assembled cylinder domains. 
     
     
         6 . The semiconductor structure of  claim 5 , wherein the second self-assembled block copolymer material comprises self-assembled cylindrical domains overlying and registered to the cylindrical domains of the first self-assembled block copolymer material and perpendicular to the floor of the trench. 
     
     
         7 . The semiconductor structure of  claim 4 , wherein the first self-assembled block copolymer material comprises a hexagonal array of the self-assembled cylinder domains. 
     
     
         8 . The semiconductor structure of  claim 7 , wherein the second self-assembled block copolymer material comprises self-assembled cylindrical domains overlying and registered to the cylindrical domains of the first self-assembled block copolymer material and perpendicular to the floor of the trench. 
     
     
         9 . The semiconductor structure of  claim 1 , wherein the first self-assembled block copolymer material comprises half-cylindrical domains parallel to a floor and the sidewalls of the trench. 
     
     
         10 . The semiconductor structure of  claim 9 , wherein the second self-assembled block copolymer material comprises lamellar domains overlying and registered to the half-cylindrical domains of the first self-assembled block copolymer material, the overlying lamellar domains perpendicular to the floor of the trench. 
     
     
         11 . A template, comprising lines extending a length of a trench in a substrate and separated by openings exposing a floor of the trench,
 wherein each of the lines comprises a first self-assembled block copolymer material and a second self-assembled block copolymer material overlying the first self-assembled block copolymer material, the first self-assembled block copolymer material comprising a different material than the second self-assembled block copolymer material,   wherein the first self-assembled block copolymer material comprises self-assembled polymer domains registered to sidewalls of the trench and extending the length of the trench, and   wherein the second self-assembled block copolymer material comprises self-assembled polymer domains overlying and registered to the self-assembled polymer domains of the first self-assembled block copolymer material.   
     
     
         12 . The template of  claim 11 , wherein the lines are separated by the openings arranged in a hexagonal array perpendicular to the floor of the trench. 
     
     
         13 . The template of  claim 11 , wherein the lines are separated by the openings arranged in a single row perpendicular to the floor of the trench. 
     
     
         14 . The template of  claim 11 , wherein:
 the first self-assembled block copolymer material comprises self-assembled cylindrical domains perpendicular to the floor of the trench and extending the length of the trench, and   the second self-assembled block copolymer material comprises self-assembled cylindrical domains overlying and registered to the self-assembled cylindrical domains of the first self-assembled block copolymer material and perpendicular to the floor of the trench.   
     
     
         15 . The template of  claim 11 , wherein:
 the first self-assembled block copolymer material comprises self-assembled half-cylindrical domains parallel to the sidewalls and floor of the trench, and   the second self-assembled block copolymer material comprises lamellar domains overlying and registered to the self-assembled half-cylindrical domains of the first self-assembled block copolymer material, the overlying lamellar domains perpendicular to the floor of the trench.   
     
     
         16 . The template of  claim 11 , wherein:
 the first self-assembled block copolymer material comprises self-assembled lamellar domains perpendicular to the floor of the trench, and   the second self-assembled block copolymer material comprises lamellar domains overlying and registered to the self-assembled lamellar domains of the first self-assembled block copolymer material, the overlying lamellar domains perpendicular to the floor of the trench.   
     
     
         17 . The template of  claim 11 , wherein the openings have an aspect ratio from about 1:2 to about 1:20. 
     
     
         18 . A method of forming a semiconductor structure, comprising:
 forming a first self-assembled block copolymer material within a trench in a substrate, the first self-assembled block copolymer material comprising self-assembled polymer domains of a minor block of a first block copolymer material registered to sidewalls of the trench and extending a length of the trench;   forming a second self-assembled block copolymer material over the first self-assembled block copolymer material, the second self-assembled block copolymer material distinct from the first self-assembled block copolymer material, the second self-assembled block copolymer material comprising self-assembled polymer domains overlying and registered to the self-assembled polymer domains of the minor block of the first block copolymer material;   removing the self-assembled polymer domains of the minor block of the first block copolymer material along with the overlying and registered self-assembled polymer domains of the second self-assembled block copolymer, to form an array of openings extending the length of the trench;   removing portions of the substrate exposed through the array of openings to form openings in the substrate; and   forming a material distinct from the substrate in the openings in the substrate.   
     
     
         19 . The method of  claim 18 , wherein forming a material distinct from the substrate in the openings in the substrate comprises filling the openings in the substrate with at least one of metal or conductive alloy to form contacts to at least one of an underlying active area or a conductive line in the substrate. 
     
     
         20 . The method of  claim 18 , wherein forming a material distinct from the substrate in the openings in the substrate comprises filling the openings in the substrate with a metal-insulator-metal-stack.