Compositions comprising carboxy component and processes for photolithography

Abstract

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

1 . A method for processing a photoresist composition, comprising:
 (a) applying on a substrate a photoresist composition comprising:
 (i) one or more resins, 
 (ii) a photoactive component, and 
 (iii) one or more block copolymers that are distinct from the one or more resins; and 
   (b) immersion exposing the photoresist layer to radiation activating for the photoresist composition.   
     
     
         2 . The method of  claim 1  wherein the one or more block copolymers are substantially non-mixable with the one or more resins. 
     
     
         3 . The method of  claim 1  wherein one or more of the block copolymers comprise (1) a developer affinity block and (2) a hydrophobic block. 
     
     
         4 . The method of  claim 1  wherein one or more of the block copolymers comprise at least three distinct blocks or domains. 
     
     
         5 . The method of  claim 1  wherein the one or more block copolymers comprise hetero-substituted multi-ring carbocyclic aryl groups, sulfonamide and/or carboxy groups. 
     
     
         6 . The method of  claim 1  wherein the one or more block copolymers comprise one more fluorine groups or fluorine-substituted groups. 
     
     
         7 . The method of  claim 1  wherein the one or more block copolymers comprise aqueous base-solubilizing groups and/or one or more photoacid-labile groups. 
     
     
         8 . A coated substrate system comprising:
 a substrate having thereon:   a coating layer of a photoresist composition, the photoresist composition comprising:
 (i) one or more resins, 
 (ii) a photoactive component, and 
 (iii) one or more block copolymers that are distinct from the one or more resins. 
   
     
     
         9 . The system of  claim 8  wherein an immersion lithography fluid contacts the top surface of the photoresist coating layer 
     
     
         10 . The system of  claim 8  further comprising an immersion photolithography exposure tool. 
     
     
         11 . The system of  claim 8  wherein one or more of the block copolymers comprise (1) a developer affinity block and (2) a hydrophobic block. 
     
     
         12 . A photoresist composition comprising:
 one or more resins,   (ii) a photoactive component, and   (iii) one or more one or more block copolymers that are distinct from the one or more resins.   
     
     
         13 . The photoresist composition of  claim 12  herein the one or more block copolymers are substantially non-mixable with the one or more resins.