Gas cluster reactor for anisotropic film growth

Abstract

A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas.

What is claimed is: 
     
         1 . A gas cluster ion beam (GCIB) device, the device comprising:
 a source gas cluster formation chamber;   an ionization-acceleration chamber connected to the cluster formation chamber;   a processing chamber connected to the ionization-acceleration chamber;   a precursor gas injection device positioned on a top portion of the processing chamber such that the precursor gas is directed at a surface of a substrate contained within the processing chamber; and   an opening between the ionization-acceleration chamber and the processing chamber.   
     
     
         2 . The GCIB device of  claim 1 , wherein the injection device comprises a device having a plurality of openings through which the precursor gas may flow. 
     
     
         3 . The GCIB device of  claim 1 , further comprising:
 a mechanical scanning system in the processing chamber.   
     
     
         4 . The GCIB device of  claim 1 , further comprising:
 an aperture in the opening, the aperture having a width capable of forming a collimated GCIB.   
     
     
         5 . The GCIB device of  claim 4 , wherein the opening has a width capable of forming a broad GCIB.