Placing table and plasma processing apparatus
Abstract
Provided is a placing table configured to place a workpiece thereon. The placing table includes: an electrostatic chuck configured to attract the workpiece; a support member configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region. The support member includes: an intermediate layer formed of a ceramic sintered compact and supported on the second region via an adhesive; a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; and a heater electrode provided within the thermally sprayed ceramic layer. The heater electrode is formed by the thermal spraying method.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A placing table configured to place a workpiece thereon, the placing table comprising:
an electrostatic chuck configured to attract the workpiece; a support member configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region, wherein the support member includes: an intermediate layer formed of a ceramic sintered compact and supported on the second region via an adhesive; a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; and a heater electrode provided within the thermally sprayed ceramic layer, the heater electrode being formed by the thermal spraying method.
2 . The placing table according to claim 1 , wherein the first region and the second region are divided by a groove that extends in an annular shape between the first region and the second region.
3 . The placing table according to claim 1 , wherein a power feeding contact electrically connected to the heater electrode is provided in the intermediate layer, and the power feeding contact is formed of a conductive ceramic material.
4 . The placing table according to claim 1 , wherein the thermally sprayed ceramic layer includes a zirconia film formed between the heater electrode and the intermediate layer by the thermal spraying method.
5 . A plasma processing apparatus comprising the placing table defined in claim 1 .Join the waitlist — get patent alerts
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